2017
DOI: 10.1109/lmwc.2016.2646998
|View full text |Cite
|
Sign up to set email alerts
|

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
21
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 34 publications
(21 citation statements)
references
References 15 publications
0
21
0
Order By: Relevance
“…References [32]- [34] describe MMIC circuits based on GFETs. Although they reported good conversion gain values, LO signals with frequency around 100 [33], [34] and 200 GHz [32], and power level between 8 and 16 dBm are used, requiring external high-performance frequency multipliers. On the other hand, works [8] and [42] present subharmonic mixers based on macroscopic graphene sheets, following a design approach similar to that used in this work.…”
Section: Discussionmentioning
confidence: 99%
“…References [32]- [34] describe MMIC circuits based on GFETs. Although they reported good conversion gain values, LO signals with frequency around 100 [33], [34] and 200 GHz [32], and power level between 8 and 16 dBm are used, requiring external high-performance frequency multipliers. On the other hand, works [8] and [42] present subharmonic mixers based on macroscopic graphene sheets, following a design approach similar to that used in this work.…”
Section: Discussionmentioning
confidence: 99%
“…Conventionally, depending on its drain bias, a mixing transistor can be classified exclusively as active (V ds ≠ 0) or passive (V ds = 0). While active mixing comes from the LO-induced transconductance (G m ) modulation, passive mixing relies on channel-conductance (G ds ) modulation [21][22][23][24]. In the more advanced silicon processes such as 65-or 40-nm CMOS where the early effect cannot be neglect (because of their short channel length), a strict separation of active and passive mixing becomes impossible, as both G m and G ds will be affected whenever V ds ≠ 0.…”
Section: Introductionmentioning
confidence: 99%
“…There are several literatures of the mixer devices with compact sizes, such as a monolithic microwave integrated circuit (MMIC) technique and CMOS fabrication . To reduce the size of the mixers, a high relative permittivity substrate can be used; however, the cost is high …”
Section: Introductionmentioning
confidence: 99%
“…There are several literatures of the mixer devices with compact sizes, such as a monolithic microwave integrated circuit (MMIC) technique and CMOS fabrication. [8][9][10][11][12][13] To reduce the size of the mixers, a high relative permittivity substrate can be used; however, the cost is high. 14,15 In this article, the proposed compact size of the Wilkinson power divider is presented and it is applied to mixer.…”
Section: Introductionmentioning
confidence: 99%