A W-band monolithic pseudomorphic InGaAs HEMT downconverter

Chang, Kuo-Ming; Wang, H.; Chen, T.N.; Tan, K. H.; Berenz, I.; Dow, G.S.; Han, A.C.; Garske, D.; Liu, L.C.T.

doi:10.1109/mcs.1991.148087

Cited by 13 publications

(2 citation statements)

References 9 publications

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“…The differences in the fabrication process steps include the device isolation process, the ohmic metallization, alloying conditions and the through substrate via hole etch. The MMIC LNA's fabricated using this process have also achieved state-of-the-art high gain and low noise figure performance at lower frequencies, which include a Qband (44 GHz) two-stage LNA exhibiting 2.2-dB noise figure with 23-dB associated gain [7], a V-band three-stage LNA demonstrating less than 3-dB noise figure with 22-dB gain at 60 GHz [8], a W-band one-stage LNA showing 2.6-dB noise figure with 7-dB gain at 96 GHz [9], and a W-band four-stage balanced amplifier with small signal gain of 2 3 f 3 dB from 75 to 110 GHz [IO].…”

Section: Device Fabrication and Characteristicsmentioning

confidence: 99%

A 140-GHz monolithic low noise amplifier

Wang¹,

Lai²,

Lo³

et al. 1995

IEEE Microw. Guid. Wave Lett.

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This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-pm pseudomorstage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested. It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz.This is the highest frequency monolithic amplifier ever reported using three terminal devices. phic IIIA~AS/L~G~ASLIIP low noise HEMT techn~log~. A two-

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Section: Device Fabrication and Characteristicsmentioning

confidence: 99%

A 140-GHz monolithic low noise amplifier

Wang¹,

Lai²,

Lo³

et al. 1995

IEEE Microw. Guid. Wave Lett.

Self Cite

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“…Because of these excellent high-frequency characteristics, InAlAs/InGaAs/InP HEMT' s have been applied to various monolithic microwave integrated circuits (MMIC), such as low-noise amplifiers [5]- [8], high-power amplifiers [9], traveling-wave amplifiers [lo], mixers 11 13, oscillators [ 121, and the integration of these kinds of analog circuits (receivers, as reported in [13]). We also reported monolithic low-noise amplifiers (LNA) for 26-, 40-, and 50-GHz bands [14]- [16] and a distributed baseband amplifier for dc to 90…”

Section: Introductionmentioning

confidence: 99%

High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs

Umeda

Enoki

Osafune

et al. 1996

IEEE Trans. Microwave Theory Techn.

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Abstruct-Sixty-GHz-band two-stage monolithic low-noise amplifiers and ultrahigh-speed SCFL static frequency dividers have been fabricated using the same InAlAshGaAsAnP HEMT process. This process assures uniformity by taking advantage of a 0.1-pm T-shaped gate and an InP recess-etch stopper. Circuits are designed with priorities on stable operation, high yield, and uniformity. For the low-noise amplifier, the stabilization is optimized so as to minimize noise for the design gain while maintaining stability at all frequencies. The resultant amplifiers show a fabrication yield of 75% and at 62 GHz have a noise figure of 4.3 f 0.19 dB and a gain of 11.8 f 0.25 dB. For the frequency divider, the load resistance is set to be large enough to assure stable operation (circuit simulation shows that increasing the load resistance has little effect on the maximum toggle frequency). Frequency dividers designed with the optimum load resistance for stable and high-speed operation show a fabrication yield of 63% and have a maximum toggle frequency of 36.7 f 0.55 GHz. These results demonstrate the feasibility of using this HEMT process to monolithically integrate analog and digital circuits on one chip.

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Test and Reliability

Allen

1996

Pseudomorphic HEMT Technology and Applications

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A W-band monolithic pseudomorphic InGaAs HEMT downconverter

Cited by 13 publications

References 9 publications

A 140-GHz monolithic low noise amplifier

A 140-GHz monolithic low noise amplifier

High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs

Test and Reliability

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