A wafer-level multi-chip module process with thick photosensitive benzocyclobutene as the dielectric for microwave application

Tang, Jin; Sun, Xiaowei; Li, Luo

doi:10.1088/0960-1317/21/6/065035

Cited by 18 publications

(7 citation statements)

References 20 publications

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“…Passive components like filter, balun, phase shifter or power divider can be implemented using this IPD process with high resistivity silicon substrate for low cost and high volume production. It enables customers to integrate passive only circuits with other active devices for multi-chip module (MCM) applications [2]- [3]. It has three metal layers with low dielectric constant material as shown in the Fig.1.…”

Section: Process and Variation Of Resistormentioning

confidence: 99%

Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology

Chang¹,

Wang²,

Hsu³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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The influence of process variation on resistor in RF passive design is investigated. By expanding the layout size of resistor, the accuracy of resistance can be improved to overcome the process variation in integrated passive devices (IPD) technology. In order to address this critical effect in RF passive design, three common components, including a 50 Ω termination, a 100 Ω resistive load in the Wilkinson power divider and a 1 Ω resistor for current sensing, are demonstrated. The effectiveness of layout expansion skill for precise RF resistors show the process variation could be minimized to 0.16%. By using these accurate resistors, the characteristics of RF passive designs are also improved.

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Section: Process and Variation Of Resistormentioning

confidence: 99%

Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology

Chang¹,

Wang²,

Hsu³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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“…The process flow of BCB includes BCB spin-coating, pre-baking, lithography, pre-development baking, development, post-development baking, curing [9] . To adapt to the two sides interconnection of wafer, some adjustments of process should be made on the other side of the wafer.…”

Section: The Bcb Of Process On Two Sides Of Wafermentioning

confidence: 99%

A novel wafer-level double side packaging and its high frequency performance

Xiao

Tang

et al. 2013

2013 IEEE International Conference on Industrial Technology (ICIT)

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In this paper, a wafer-level System-in-Packaging structure using through silicon via (TSV) for integration on both sides of the silicon wafer is presented. It is composed of BCB/ metal multilayers, high-resistivity silicon substrate with TSV. To reduce the transmission loss in microwave frequency, not only the high-resistivity silicon is used, but also a special TSV structure with 6 grounded shielding vias around the core via are adopted. Microstrip line (MSL) is used to transmit highfrequency signal on package plane together with the low permittivity intermediate dielectric polymer, BCB. Descriptions on the interconnection structure and the fabrication process are included. The microwave measurement result of the MSL connected by TSVs is measured up to 35GHz. The results of both the simulation and the measurement are presented.

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“…The details of adapting this type of BCB process on one side of the wafer can be referred to our previous work [16]. In this work, we mainly focus on the backside BCB process when layers of BCB are fabricated on the top side.…”

Section: Bcb Processmentioning

confidence: 99%

A novel wafer-level metal/BCB interconnection between both sides of wafer using TSV and its microwave performance

Tang

Chen

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

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In this paper, a novel metal/BCB interconnection structure using through silicon via (TSV) to achieve integration on both sides of the Si wafer are proposed. It is composed of BCB/metal multilayers, high-resistivity silicon substrate with TSV. To reduce the transmission loss in microwave frequency, not only the high-resistivity silicon is used, but also a special TSV structure with the grounded shielding vias around the core via is adopted. Microstrip line (MSL) is used to transmit high-frequency signal on package plane together with the low-permittivity intermediate dielectric polymer, BCB. Descriptions on the interconnection structure and the process are included. The test vehicle, MSLs on both sides of the wafer connected by TSVs is measured up to 35GHz. The results of both the simulation and the measurement are presented. The results verify that the integration technology has a prospect in high-density wafer-level integration in microwave band.

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A wafer-level multi-chip module process with thick photosensitive benzocyclobutene as the dielectric for microwave application

Cited by 18 publications

References 20 publications

Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology

Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology

A novel wafer-level double side packaging and its high frequency performance

A novel wafer-level metal/BCB interconnection between both sides of wafer using TSV and its microwave performance

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