A wafer-like apparatus for two-dimensional measurement of plasma parameters and temperature distribution in low-temperature plasmas

Lim, Yeong-Min; Eo, Hyundong; Kim, Kyung-Hyun; Lee, Moo-Young; Chung, Chin-Wook

doi:10.1063/5.0044115

Cited by 7 publications

(3 citation statements)

References 45 publications

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“…The heat flux utilized in the simulation was adopted from Y. D. Lim et al 28,29) The heat flux applied to the Si substrate exposed in an Ar plasma environment, depending on the inductively coupled plasma (ICP) power, can be monitored through the thermal sensor system. Moreover, the heat flux allows observation of temperature discontinuities as it traverses various layers of components.…”

Section: Experimental Methodsmentioning

confidence: 99%

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

Youn,

Hong

2024

Jpn. J. Appl. Phys.

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In semiconductor processes, precise control of the wafer-in-process is a key parameter closely related to production yield, and the development of electrostatic chuck (ESC) continues towards higher chucking voltage with higher backside cooling gas. This study aims to determine the target temperature and uniformity of the wafer surface by varying the contact ratio of the ceramic-embossing facing the wafer-in-process. A computational fluid dynamics (CFD) model with a thin wall boundary condition is considered to interpret the flow of the rarefied gas between the wafer and ceramic surface of the ESC. Through 3D simulations conducted with ANSYS Fluent, we observed temperature changes as the backside gas pressure varied from 1 to 9 Torr. The ESC with the highest contact ratio performed exceptionally well with an average temperature of 295 K and a coefficient of variation of 0.04 %.

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Section: Experimental Methodsmentioning

confidence: 99%

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

Youn,

Hong

2024

Jpn. J. Appl. Phys.

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“…To address the aforementioned issues, there have been many attempts to monitor various plasma parameters by means of developing wafer-type plasma sensors. Lim et al [ 17 ] proposed a wafer-type plasma sensor that is capable of simultaneously measuring the 2D distribution of plasma parameters. However, the sensor is not compatible in size with a 12-inch chamber.…”

Section: Introductionmentioning

confidence: 99%

Development of Wafer-Type Plasma Monitoring Sensor with Automated Robot Arm Transfer Capability for Two-Dimensional In Situ Processing Plasma Diagnosis

Park,

Kim,

Cho

et al. 2024

Sensors

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In this work, we propose our newly developed wafer-type plasma monitoring sensor based on a floating-type double probe method that can be useful for two-dimensional (2D) in situ plasma diagnosis within a semiconductor processing chamber. A key achievement of this work is the first realization of an ultra-thin plasma monitoring sensor with a system thickness of ~1.4 mm, which supports a fully automated robot arm transfer capability for in situ plasma diagnosis. To the best of our knowledge, it is the thinnest accomplishment among all wafer-type plasma monitoring sensors. Our proposed sensor is assembled with two Si wafers and SiO2-based probes; accordingly, it makes it possible to monitor the actual dynamics of processing plasmas under electrostatic chucking (ESC) conditions. Also, it allows for the prevention of chamber contamination issues after continuously exposing the radio frequency (RF) to various processing gases. Using a test-bed chamber, we successfully demonstrated the feasibility and system performance of the proposed sensor, including robot arm transfer capability, vacuum and thermal stress durability, and data integrity and reproducibility. Consequently, compared with the conventional plasma diagnostic tools, we expect that our proposed sensor will be highly beneficial for tool-to-tool matching (TTTM) and/or for studying various plasma-related items by more accurately providing the parameters of processing plasmas, further saving both time and manpower resources required for preventive maintenance (PM) routines as well.

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“…The WIP temperature must be analyzed and controlled to enhance the etching rate and improve uniformity [25]. Different methods such as optical thermometer, thermal flux sensor, and wafer-type monitoring apparatus have been proposed for analyzing WIP temperature [20,[26][27][28]. In the present study, heat flux was calculated using inductive coupled plasma-reactive ion etch (ICP-RIE) equipment in an invasive way to predict wafer surface temperature.…”

Section: Introductionmentioning

confidence: 99%

Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch

Cho,

Park,

et al. 2023

Applied Sciences

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Plasma plays an important role in semiconductor processes. With the recent miniaturization and integration, the control of plasma became essential for success in the critical dimension of a few nanometers and etch narrow and deep holes with their high aspect ratios. Recently, the etching process has reached physical limitations due to a significant increase in wafer surface temperature under the elevated amount of RF power, affecting not only the warpage phenomenon, but also etching uniformity and etching profiles. Therefore, the plasma characteristics are identified using an invasive single Langmuir probe (SLP) for wafer temperature diagnosis. Optical data is obtained through a non-invasive optical emission spectroscopy (OES) and the plasma parameters are derived to compare and verify with the SLP. Two variables, electron temperature and electron density, are substituted for the heat flux formula to derive the heat flux according to the location. Using a wafer-type temperature sensor, the trends of the derived heat flux values towards wafer chuck were investigated. This study presents a method to calculate heat flux values in real time, anticipate wafer temperatures, and potentially illuminate existing ion heating problems.

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A wafer-like apparatus for two-dimensional measurement of plasma parameters and temperature distribution in low-temperature plasmas

Cited by 7 publications

References 45 publications

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

Development of Wafer-Type Plasma Monitoring Sensor with Automated Robot Arm Transfer Capability for Two-Dimensional In Situ Processing Plasma Diagnosis

Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch

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