A way to improve timing resolution of SSPM: Pulse Shape

Kim, Chang H.

doi:10.22323/1.090.0010

Cited by 3 publications

(3 citation statements)

References 7 publications

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“…Finally, for SiPM based detectors, the large output capacitance ( C ) associated with its relatively large pixel size and the input resistance ( R ) of the subsequent amplifier, can reduce the slope of the output signal by forming a long decay time constant (RC) (Kim 2009, Spanoudaki and Levin 2011b). …”

Section: Background and Theorymentioning

confidence: 99%

Optimizing timing performance of silicon photomultiplier-based scintillation detectors

2013

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Precise timing resolution is crucial for applications requiring photon time-of-flight (ToF) information such as ToF positron emission tomography (PET). Silicon photomultipliers (SiPM) for PET, with their high output capacitance, are known to require custom preamplifiers to optimize timing performance. In this paper, we describe simple alternative front-end electronics based on a commercial low-noise RF preamplifier and methods that have been implemented to achieve excellent timing resolution. Two radiation detectors with L(Y)SO scintillators coupled to Hamamatsu SiPMs (MPPC S10362–33-050C) and front-end electronics based on an RF amplifier (MAR-3SM+), typically used for wireless applications that require minimal additional circuitry, have been fabricated. These detectors were used to detect annihilation photons from a Ge-68 source and the output signals were subsequently digitized by a high speed oscilloscope for offline processing. A coincident resolving time (CRT) of 147 ± 3 ps FWHM and 186 ± 3 ps FWHM with 3 × 3 × 5 mm3 and with 3 × 3 × 20 mm3 LYSO crystal elements were measured, respectively. With smaller 2 × 2 × 3 mm3 LSO crystals, a CRT of 125 ± 2 ps FWHM was achieved with slight improvement to 121 ± 3 ps at a lower temperature (15°C). Finally, with the 20 mm length crystals, a degradation of timing resolution was observed for annihilation photon interactions that occur close to the photosensor compared to shallow depth-of-interaction (DOI). We conclude that commercial RF amplifiers optimized for noise, besides their ease of use, can produce excellent timing resolution comparable to best reported values acquired with custom readout electronics. On the other hand, as timing performance degrades with increasing photon DOI, a head-on detector configuration will produce better CRT than a side-irradiated setup for longer crystals.

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Section: Background and Theorymentioning

confidence: 99%

Optimizing timing performance of silicon photomultiplier-based scintillation detectors

2013

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“…4) and discussed the benefits of tailoring the capacitance in parallel to the quench resistor of a cell [8][9]. By varying the different parameters of the simulation, one will find that a lower cell capacitance (C d ) leads to a faster rise time and that a larger quenching capacitance (C q ) will mostly increase the single photoelectron pulse height.…”

Section: Tailoring Of Parasitic Capacitancementioning

confidence: 99%

Characterization of an SiPM dedicated at analytical, life science, and medical imaging

Bérard¹,

Couture²,

Laforce³

et al. 2013

SPIE Proceedings

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Silicon photomultipliers with high photon detection efficiency in the 350 to 800 nm range and low dark count rate are currently being developed in a variety of geometry, microcell size and area in order to address the needs of the analytical, life science, medical imaging community as well as for various scientific and technological applications. This SiPM development platform is based on previous knowledge of low dark count avalanche photodiode operated in Geiger-mode found in the Excelitas single photon counting module. Low dark counts and low temperature sensitivity are especially important when tiling up SiPMs to form larger area detectors such as block detectors typically used in positron emission tomography. The latest developments include; 1. Optical trenches to suppress crosstalk which allowed to increase the operating voltage range from 5 to 10 V above breakdown, 2. Tailored parasitic capacitance to obtain single photon timing resolution close to 200 ps FWHM and 3. Improved PDE at shorter wavelengths by optimizing the entrance window. A corrected energy resolution of 12.0 % was typically obtained at 511 keV which, alongside the good timing resolution, makes this SiPM a perfect candidate for time-of-flight PET and other application requiring a timing resolution better than 200 ps.

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“…Two types of these new fast SPM were fabricated -an N-on-P device (MicroFM-30035-SMT) with a photon detection efficiency (POE) at long wavelengths and a prototype P-on-N device (referenced here as B-Proto) with a high POE at low wavelengths [4]. The specifications and typical performance parameters of the tested devices are summarized in Table 1.…”

Section: N Detector Module and Setupmentioning

confidence: 99%

Performance of fast timing silicon photomultipliers for scintillation detectors

Yeom

Vinke

Pavlov

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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A new silicon photomultiplier has been fabricated for fast timing applications. This new silicon photomultiplier, called 'fast SPM', is fabricated with a third terminal that has a much lower output capacitance. An N-on-P type (,MicroFM') and a prototype P-on-N type CB-proto') have been tested for their Organization for Scientific Research (NWO) and N1H-NlBlB grant R2IEBOI4405.Jung Yeol Yeom and Ruud Vinke are with Molecular lmaging Program at Stanford and

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A way to improve timing resolution of SSPM: Pulse Shape

Cited by 3 publications

References 7 publications

Optimizing timing performance of silicon photomultiplier-based scintillation detectors

Optimizing timing performance of silicon photomultiplier-based scintillation detectors

Characterization of an SiPM dedicated at analytical, life science, and medical imaging

Performance of fast timing silicon photomultipliers for scintillation detectors

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