Background:As neutron fields are always accompanied by gamma rays, it is essential to distinguish neutrons from gamma rays in the detection of neutrons. Neutrons and gamma rays can be separated by pulse shape discrimination (PSD) methods. Recently, we performed characterization of a stilbene scintillator detector and an EJ-301 liquid scintillator detector with a highspeed digitizer DT5730 and investigated optimized PSD variables for both detectors. This study is for providing a basis for developing fast neutron/gamma-ray dual-particle imager. Materials and Methods:We conducted PSD experiments using stilbene scintillator and EJ-301 liquid scintillator and evaluated neutron and gamma ray discriminability of each PSD method with a 137 Cs gamma source and a 252 Cf neutron source. We implemented digital signal processing techniques to apply two PSD methods -the charge comparison (CC) method and the constant time discrimination (CTD) method -to distinguish neutrons from gamma rays. We tried to find optimized PSD variables giving the best discriminability in a given experimental condition. Results and Discussion:For the stilbene scintillator detector, the charge comparison method and the constant time discrimination method both delivered the PSD FOM values of 1.7. For the EJ-301 liquid scintillator detector, both PSD methods delivered the PSD FOM values of 1.79. With the same PSD variables, PSD performance was excellent in 300 ± 100 keVee, 500 ± 100 keVee, and 700 ± 100 keVee energy regions. This result shows that we can achieve an effective discrimination of neutrons from gamma rays using these scintillator detector systems. Conclusion:We applied both PSD methods to a stilbene and a liquid scintillator and optimized the PSD performance represented by FOM values. We observed a good separation performance of both scintillators combined with a high-speed digitizer and digital PSD. These results will provide reference values for the dual-particle imager we are developing, which can image both fast neutrons and gamma rays simultaneously.

Precise timing resolution is crucial for applications requiring photon time-of-flight (ToF) information such as ToF positron emission tomography (PET). Silicon photomultipliers (SiPM) for PET, with their high output capacitance, are known to require custom preamplifiers to optimize timing performance. In this paper, we describe simple alternative front-end electronics based on a commercial low-noise RF preamplifier and methods that have been implemented to achieve excellent timing resolution. Two radiation detectors with L(Y)SO scintillators coupled to Hamamatsu SiPMs (MPPC S10362-33-050C) and front-end electronics based on an RF amplifier (MAR-3SM+), typically used for wireless applications that require minimal additional circuitry, have been fabricated. These detectors were used to detect annihilation photons from a Ge-68 source and the output signals were subsequently digitized by a high speed oscilloscope for offline processing. A coincident resolving time (CRT) of 147 ± 3 ps FWHM and 186 ± 3 ps FWHM with 3 × 3 × 5 mm 3 and with 3 × 3 × 20 mm 3 LYSO crystal elements were measured, respectively. With smaller 2 × 2 × 3 mm 3 LSO crystals, a CRT of 125 ± 2 ps FWHM was achieved with slight improvement to 121 ± 3 ps at a lower temperature (15°C). Finally, with the 20 mm length crystals, a degradation of timing resolution was observed for annihilation photon interactions that occur close to the photosensor compared to shallow depth-of-interaction (DOI). We conclude that commercial RF amplifiers optimized for noise, besides their ease of use, can produce excellent timing resolution comparable to best reported values acquired with custom readout electronics. On the other hand, as timing performance degrades with increasing photon DOI, a head-on detector configuration will produce better CRT than a side-irradiated setup for longer crystals.

GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, stopping power and relatively fast decay time. In this study, we fabricated a ceramic Ce:GAGG scintillator as a cost-effective alternative to single crystal Ce:GAGG and, for the first time, investigated their performances when coupled to the digital silicon photomultiplier (dSiPM) -a new type of photosensor designed for applications in medical imaging, high energy and astrophysics. Compared to 3 × 3 × 2 mm 3 sized single crystal Ce:GAGG, the translucent ceramic Ce:GAGG, which has a much lower transmittance than the single crystal, was determined to give an output signal amplitude that is approximately 61% of single crystal Ce:GAGG. The energy resolution of the 511 keV annihilation peak of a 22 Na source was measured to be 9.9 ± 0.2% and 13.0 ± 0.3% for the single and ceramic scintillators respectively. On the other hand, the coincidence resolving time (CRT) of ceramic Ce:GAGG was 307 ± 23 ps, better than the 465 ± 37 ps acquired with single crystals -probably attributed to its slightly faster decay time and higher proportion of the fast decay component. The ceramic Ce:GAGG may be a promising cost-effective candidate for applications that do not require thick scintillators such as x-ray detectors and charged particle detectors, and those that require time-of-flight capabilities.

We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 1016 cm−3 or higher; after annealing for a long time, this decreased to 1015 cm−3 or less. The arsenic-doped CdTe maintained a hole density of approximately 1016 cm−3 even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~1016 cm−3 and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.

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