A wet release process for fabricating slender and compliant suspended micro-mechanical structures

Pamidighantam, Sayanu; Laureyn, Wim; Rusu, Cristina; Baert, Kris; Puers, Robert; Tilmans, H.A.C.

doi:10.1016/s0924-4247(02)00350-3

Cited by 10 publications

(6 citation statements)

References 16 publications

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“…These results are consistent with the conclusion that the organic molecular layers are covalently attached to the surface. The CA values for the alkyl-based layers were less than what has previously been reported for these types of alkyl treatments on silicon. , …”

Section: Resultscontrasting

confidence: 63%

“…The CA values for the alkyl-based layers were less than what has previously been reported for these types of alkyl treatments on silicon. 41,52 Figure 2 shows the FTIR absorbance spectra of alkyl-treated surfaces in the spectral region of the C-H stretching modes. In comparing the spectrum of the OTES-derivatized surface on sol-gel-grown ZnO to an LB stearic acid layer on Si (corrected for being double-sided), we note that the integrated intensity of the C-H stretching modes in the OTES layer is about 75% of that observed in the stearic acid layer.…”

Section: Resultsmentioning

confidence: 99%

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Surface Modification of ZnO Using Triethoxysilane-Based Molecules

et al. 2008

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Zinc oxide (ZnO) is an important material for hybrid inorganic-organic devices in which the characteristics of the interface can dominate both the structural and electronic properties of the system. These characteristics can be modified through chemical functionalization of the ZnO surface. One of the possible strategies involves covalent bonding of the modifier using silane chemistry. Whereas a significant body of work has been published regarding silane attachments to glass and SiO2, there is less information about the efficacy of this method for controlling the surface of metal oxides. Here we report our investigation of molecular layers attached to polycrystalline ZnO through silane bonding, controlled by an amine catalyst. The catalyst enables us to use triethoxysilane precursors and thereby avoid undesirable multilayer formation. The polycrystalline surface is a practical material, grown by sol-gel processing, that is under active exploration for device applications. Our study included terminations with alkyl and phenyl groups. We used water contact angles, infrared spectroscopy, and X-ray photoemission spectroscopy to evaluate the modified surfaces. Alkyltriethoxysilane functionalization of ZnO produced molecular layers with submonolayer coverage and evidence of disorder. Nevertheless, a very stable hydrophobic surface with contact angles approaching 106 degrees resulted. Phenyltriethoxysilane was found to deposit in a similar manner. The resulting surface, however, exhibited significantly different wetting as a result of the nature of the end group. Molecular layers of this type, with a variety of surface terminations that use the same molecular attachment scheme, should enable interface engineering that optimizes the chemical selectivity of ZnO biosensors or the charge-transfer properties of ZnO-polymer interfaces found in oxide-organic electronics.

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Section: Resultscontrasting

confidence: 63%

Section: Resultsmentioning

confidence: 99%

Surface Modification of ZnO Using Triethoxysilane-Based Molecules

et al. 2008

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“…Self-assembled monolayer (SAM) films have provided new and easier ways to control the physical and chemical properties of surfaces [1]. For example, organosilane compounds are known to form robust, chemisorbed SAMs on a wide variety of surfaces such as glass, quartz, metal oxides [1] and even polymers [2], and are used in biological interfaces and sensors [3,4], in micro-electromechanical systems [5], in organic electronics [6][7][8][9] and so on.…”

Section: Introductionmentioning

confidence: 99%

Static solvent contact angle measurements, surface free energy and wettability determination of various self-assembled monolayers on silicon dioxide

et al. 2006

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“…Special drying techniques such as freeze-drying [1], supercritical drying [1] (Fig. 15) or the use of self assembled monolayers (SAM) [39] can be used to avoid this. These special precautions for improving in-process yield are not needed when HF vapour etching is selected [37].…”

Section: Processingmentioning

confidence: 99%