“…This allows also for the usage of the simple equivalent circuit reported (Fig. 5) to model with pretty high accuracy the capacitance variation for different values of PI/PO bias voltages [16]. Fig.…”
This paper presents the design and characterization of an active push/pull toggle RF micro-electro-mechanical systems (MEMS) switch for satellite redundancy networks. The actively controlled pull-up mechanism allows for extended restoring capabilities of the switch in case of ON-state stiction. As a proof of concept an active push/pull MEMS capacitive switch was modeled, designed, and manufactured in shunt configuration on a 50 Ω coplanar transmission line. RF measurement results show a return loss better than 15 dB in the 0.1–40 GHz range and an insertion loss better than 0.5 dB over the same range. The restoring capability of the switch was experimentally proved up to 9 h, and a predictive model was proposed for the estimation of the switch time to failure.
“…This allows also for the usage of the simple equivalent circuit reported (Fig. 5) to model with pretty high accuracy the capacitance variation for different values of PI/PO bias voltages [16]. Fig.…”
This paper presents the design and characterization of an active push/pull toggle RF micro-electro-mechanical systems (MEMS) switch for satellite redundancy networks. The actively controlled pull-up mechanism allows for extended restoring capabilities of the switch in case of ON-state stiction. As a proof of concept an active push/pull MEMS capacitive switch was modeled, designed, and manufactured in shunt configuration on a 50 Ω coplanar transmission line. RF measurement results show a return loss better than 15 dB in the 0.1–40 GHz range and an insertion loss better than 0.5 dB over the same range. The restoring capability of the switch was experimentally proved up to 9 h, and a predictive model was proposed for the estimation of the switch time to failure.
“…Rangra et al [26] and Farinelli et al [27] have proposed the STS RF-MEMS switch design to achieve high mechanical stability with low actuation voltages. However, the performance of the switches is observed to be strongly affected by the presence of the residual stress, which induces undesired deflection in the torsion beams.…”
“…In general, a switch design with a low operating voltage is achieved by modifying the microbeam and electrostatic air gap thickness [25]. Rangra et al [26] and Farinelli et al [27] have proposed a new switch design, named the 'symmetric toggle RF-MEMS switch (STS)', to achieve low actuation voltages and good electrical performance. However, the experimentally measured pull-in voltage, like the traditional switch designs, has been observed to be higher than the theoretically estimated value.…”
Electrostatically actuated radio frequency microelectromechanical systems (RF-MEMS) generally consist of microcantilevers and clamped–clamped microbeams. The presence of residual stress in these microstructures affects the static and dynamic behavior of the device. In this study, nonlinear finite element method (FEM) modeling and the experimental validation of residual stress induced in the clamped–clamped microbeams and the symmetric toggle RF-MEMS switch (STS) is presented. The formation of residual stress due to plastic deformation during the thermal loading-unloading cycle in the plasma etching step of the microfabrication process is explained and modeled using the Bauschinger effect. The difference between the designed and the measured natural frequency and pull-in voltage values for the clamped–clamped microbeams is explained by the presence of the nonhomogenous tensile residual stress. For the STS switch specimens, three-dimensional (3D) FEM models are developed and the initial deflection at zero bias voltage, observed during the optical profile measurements, is explained by the residual stress developed during the plasma etching step. The simulated residual stress due to the plastic deformation is included in the STS models to obtain the switch pull-in voltage. At the end of the simulation process, a good correspondence is obtained between the FEM model results and the experimental measurements for both the clamped–clamped microbeams and the STS switch specimens.
“…The MEMS varicap (Fig. 2(c)) is a toggle-based capacitor [10] that allows for a continuous tuning with a capacitance ratio of 2.5 in the range 35 and 90 fF and a measured Q -factor of about 40 at 25 GHz. When biasing the pull-out electrodes, the bridge's central part raises up and the capacitance is reduced.…”
This paper presents the modeling, manufacturing, and testing of a micro-electromechanical system (MEMS)-based LC tank resonator suitable for low phase-noise voltage-controlled oscillators (VCOs). The device is based on a variable MEMS varactor in series with an inductive coplanar waveguide line. Two additional parallel stubs controlled by two ohmic MEMS switches have been introduced in order to increase the resonator tunability. The device was fabricated using the FBK-irst MEMS process on high resistivity (HR) silicon substrate. Samples were manufactured with and without a 0-level quartz cap. The radio frequency characterization of the devices without 0-level cap has shown a continuous tuning range of 11.7% and a quality factor in the range of 33–38. The repeatability was also tested on four samples and the continuous tuning is 11.7 ± 2%. Experimental results on the device with a 0-level cap, show a frequency downshift of about 200 MHz and a degradation of the quality factor of about 20%. This is, most likely, due to the polymeric sealing ring as well as to a contamination of the ohmic contacts introduced by the capping procedure. A preliminary design of a MEMS-based VCO was performed using Advanced Design System and a hardwired prototype was fabricated on Surface Mount Technology on RO4350 laminate. The prototype was tested resulting in a resonance frequency of 5 GHz with a phase noise of −105 and −126 dBc at 100 KHz and 1 MHz, respectively, and a measured output power of −1 dBm.
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