A Wideband 20 to 28 GHz Signal Generator MMIC With 30.8 dBm Output Power Based on a Power Amplifier Cell With 31% PAE in SiGe

Welp, Benedikt; Noujeim, Karam; Pohl, Nils

doi:10.1109/jssc.2016.2570940

Cited by 29 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, its PAE is limited to 5% over the whole bandwidth due to the adoption of a linear class of operation (class-A). Conversely, the highest power in SiGe is demonstrated in [15], a combined PA which can ensure around 30 dBm output power with PAE higher than 13% from 20 to 28 GHz. Even wider bandwidth (12-40 GHz) is achieved by adopting the distributed topology in 130 nm SiGe BiCMOS [18], which achieves 19 dBm output power while maintaining PAE higher than 8%.…”

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

show abstract

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…6. This can be achieved by using multiple transistors in parallel, thus providing the maximum number of base-fingers [11].…”

Section: Circuit Designmentioning

confidence: 99%

A SiGe transceiver chipset for automotive radar applications using wideband modulation sequences

Schoepfel

Kueppers

Aufinger

et al. 2019

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

This paper presents a W-band MIMO radar transceiver chipset for automotive applications, based on a Silicon Germanium technology. It consists of a reference VCO, operating at a center frequency of 38 GHz and a companion IC that comprises a complete millimeter-wave transceiver at 76 GHz. This chipset enables building multipurpose MIMO radar systems that can be scaled in terms of transmitter and receiver count. What makes this system innovative is the fact that it is able to handle more broadband signals than systems presented in current literature and is furthermore not limited to one modulation scheme. The chipset is capable of transmitting and receiving any signal waveform. The main goal of this work was to create a functional version of a VCO and a one-channel transceiver MMIC. Furthermore a demonstrator for a proof of concept was designed to test the MMICs on a system level. The realized VCO MMIC achieves a tuning frequency range of 6 GHz with a center frequency of 38 GHz and consumes 152 mW from a 3.3 V supply. The transceiver MMIC is fully functional and achieves a saturated output power of 11.5 dBm while drawing 670 mW from a 3.3 V supply.

show abstract

“…4, the schematic of the PA is shown. This design is taken from [20] and was scaled to the intended frequency range and redeveloped for the new technology. Design component values are given in Table II.…”

Section: B 61-ghz Wideband Pamentioning

confidence: 99%

A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas

Bredendiek

Funke

Schoepfel

et al. 2018

IEEE J. Solid-State Circuits

Self Cite

View full text Add to dashboard Cite

This paper presents SiGe-based transmitter and receiver chips for a radio frequency identification (RFID) frontend in the 61-GHz industrial, scientific, and medical (ISM) frequency band. The chips are fabricated in a modern 130-nm SiGe BiCMOS technology with HBTs offering an f T of 250 GHz and f max of 370 GHz. The presented transmitter consists of a fundamental voltage-controlled oscillator (VCO), a power amplifier (PA), lumped element Wilkinson power dividers, and a static divide-by-16 chain for stabilization within a phase-locked loop (PLL). Two variants of the transmitter are fabricated with supply voltages of 3.3 and 5 V, respectively. The transmitters are designed to provide an efficient signal source to supply a passive RFID tag with the maximum allowed 20-dBm effective isotropic radiated power (EIRP) for short-range devices. The 3.3-V transmitter chip achieves a peak output power of 17 dBm, PAE PA of 18.6% and dc-to-RF efficiency of 12.9% (excluding the divider). At 61 GHz, a phase noise of −102 dBc/Hz at 1 MHz offset is achieved. The power consumption for the 5-and 3.3-V transmitter chips is 710 and 482 mW, respectively. The receiver chip is implemented as two Gilbert cell mixers inphase quadrature configuration to compensate for destructive interference that may be caused by varying distance between reader and tag.

show abstract

A Wideband 20 to 28 GHz Signal Generator MMIC With 30.8 dBm Output Power Based on a Power Amplifier Cell With 31% PAE in SiGe

Cited by 29 publications

References 12 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A SiGe transceiver chipset for automotive radar applications using wideband modulation sequences

A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas

Contact Info

Product

Resources

About