A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

Gustafsson, David; Cahuana, Jessica Chani; Kuylenstierna, Dan; Angelov, I.; Rorsman, Niklas; Fager, Christian

doi:10.1109/tmtt.2012.2231421

Cited by 96 publications

(27 citation statements)

References 15 publications

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“…At 7 dB output power back-off, that is the operative power level in presence of modulated signal, the efficiency is higher than 47%. This values are in line with similar Doherty MMICs realized on the same technology [26,27], further proving the reliability of the process and of its design kit models. Output Power (dBm)…”

Section: Efficiency(%)supporting

confidence: 82%

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

2014

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This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7-15 GHz dual-band combined power amplifiers, both based on a commercial foundry process. The employed architectures, the main design steps and the pros and cons of using gallium nitride technology are highlighted. The measured performance demonstrates the potentialities of the employed technology, and the progress in the accuracy, reliability and performance of the process.

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Section: Efficiency(%)supporting

confidence: 82%

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

2014

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“…The DPAs presented in [65]- [67] adopt the same TriQuint 0.25 m GaN on SiC MMIC process, and have been conceived for 7 GHz microwave backhauls. In the first two cases, an asymmetrical DPA architecture is adopted, with 4 100 m and 10 100 m device sizes for the main and the auxiliary, respectively.…”

Section: B Compound Technologymentioning

confidence: 99%

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Camarchia

Pirola

Quaglia

et al. 2015

IEEE Trans. Microwave Theory Techn.

211

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In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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“…While the use of 0.25 µm GaN technology for frequencies up to 10 GHz is well explored in the literature [16,17], and commercial products are already available, few examples can be found at higher frequencies. The design of the MMIC PA for 15 GHz backhaul has the aim to explore the capabilities of the adopted technology in Ku-band, to assess whether it can still be considered a viable alternative to GaAs solutions.…”

Section: Class Ab Pas For 15 Ghz Microwave Backhaulmentioning

confidence: 99%

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

et al. 2016

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Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 µm Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.

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A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

Cited by 96 publications

References 15 publications

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

The Doherty Power Amplifier: Review of Recent Solutions and Trends

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

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