A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology

Chen, Lisheng; Chen, Lang; Zhu, He; Gómez‐García, Roberto; Zhu, Xi

doi:10.1109/tcsi.2022.3220183

Cited by 23 publications

(5 citation statements)

References 23 publications

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“…Moreover, such input impedance robustness at Port 1 also indicates why a BA based design has superior impedance matching performance with wide bandwidth. To apply this conclusion to the LMBA design, instead of using a single-ended PA structure in the CSP (control-signal path) as in [18] and [19], a BA-like structure is proposed for implementation [29]- [31]. Consequently, the undesired impedance "interaction" between the CSP and BA paths can be minimized.…”

Section: A Theoretical Analysismentioning

confidence: 99%

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off

Chen,

Sun

et al. 2024

IEEE J. Emerg. Sel. Topics Circuits Syst.

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The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical loadmodulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-50 Ω load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the S-LMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (Psat) with a maximum poweradded efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVMrms) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadratureamplitude-modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm 2 .

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Section: A Theoretical Analysismentioning

confidence: 99%

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off

Chen,

Sun

et al. 2024

IEEE J. Emerg. Sel. Topics Circuits Syst.

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“…It requires the output impedance transformation ratio to be approximately 2, which could be simply achieved using a transformer-based balun. Moreover, the technical discussion related to the BA design will be limited to a minimum in this work, as design considerations for mm-wave BA can be found in [31]- [33]. Instead, more insight of LMBA design will be explored, especially the design choice for magnitude and phase control will be discussed in detail.…”

Section: A Overview Of the Proposed Architecturementioning

confidence: 99%

A 40-GHz Load Modulated Balanced Power Amplifier Using Unequal Power Splitter and Phase Compensation Network in 45-nm SOI CMOS

Chen

et al. 2023

IEEE Trans. Circuits Syst. I

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In this work, a ten-way power-combined power amplifier is designed using a load modulated balanced amplifier (LMBA)-based architecture. To provide the required magnitude and phase controls between the main and control-signal paths of the LMBA, an unequal power splitter and a phase compensation network are proposed. As proof of concept, the designed power amplifier is implemented in a 45-nm SOI CMOS process. At 40 GHz, it delivers a 25.1 dBm Psat with a peak power-added efficiency (PAE) of 27.9%. At 6-dB power back-off level, it achieves 1.39 times drain efficiency enhancement over an ideal Class-B power amplifier. Using a 200-MHz single-carrier 64-QAM signal, the designed amplifier delivers an average output power of 16.5 dBm with a PAE of 13.1% at an EVMrms of -23.9 dB and ACPR of -25.3 dBc. The die size, including all testing pads, is only 1.92 mm 2 . To the best of the authors' knowledge, compared with the other recently published silicon-based LMBAs, this design achieves the highest Psat.Index Terms -Doherty amplifier, load-modulated balanced amplifier (LMBA), millimeter-wave (mm-wave) power amplifier, power back-off capability, radio-frequency integrated circuits (RFIC), silicon-on-insulator (SOI).

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“…Owing to the requirement of immunity to environmental noise, balanced circuits have attracted quite a lot of attention. [6][7][8][9][10][11][12][13] Coupled microstrip-slotline was extensively utilized in broadband microwave devices due to its quasiindependent paths for odd and even modes. [14][15][16][17][18] The recently designed coupler in Nasr and Safwat 15 used the coupled microstrip-slotline to improve the coupling and directivity of PCLCs.…”

Section: Introductionmentioning

confidence: 99%

“…In addition to cascading multisection PCLCs, three‐folded‐coupled lines 4 and three different types of coupled‐line sections 5 were applied in the couplers to improve the coupling. Owing to the requirement of immunity to environmental noise, balanced circuits have attracted quite a lot of attention 6–13 …”

Section: Introductionmentioning

confidence: 99%

A wideband balanced filtering coupled‐line coupler with improved directivity based on coupled microstrip–slotline

Zhou,

Xu,

Wei

et al. 2024

Micro & Optical Tech Letters

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In this article, a wideband balanced filtering coupled‐line coupler (BFCLC) with improved directivity is designed. By using coupled microstrip–slotline, the proposed BFCLC realizes tight coupling while maintaining good isolation. A lattice equivalent circuit is introduced for the coupled microstrip–slotline. Good differential‐mode transmission and high common‐mode suppression are achieved through the application of microstrip/slotline transition structures. Additional stubs are taken to compensate for the odd‐ and even‐mode phase velocities of the coupled microstrip–slotline. Transmission zeros can also be adjusted to improve selectivity. Based on the proposed BFCLC, a coupler with a smaller size using solely the slotline is designed. Two proposed couplers are manufactured to validate the theoretical design, and a good agreement between the simulation and measurement is presented.

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A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology

Cited by 23 publications

References 23 publications

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off

A 40-GHz Load Modulated Balanced Power Amplifier Using Unequal Power Splitter and Phase Compensation Network in 45-nm SOI CMOS

A wideband balanced filtering coupled‐line coupler with improved directivity based on coupled microstrip–slotline

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