A wideband HEMT cascode low-noise amplifier with HBT bias regulation

Kobayashi, K.W.; Umemoto, D.K.; Block, Thomas; Oki, A.K.; Streit, D.C.

doi:10.1109/75.481860

Cited by 15 publications

(6 citation statements)

References 4 publications

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“…The amplifier features a cascode gain cell with two identical InP DHBTs, each with an emitter area of 0.25 µm × 6 µm. The cascode configuration is favoured for the high input-output isolation it offers, as well as the high output impedance which advantageously reduces the loading on the output transmission line of the DA [29], [46]. To improve bandwidth performance, the input transmission line is scaled down by a factor ζ ≈ 0.5 and peaked by a shunt capacitance C peak = 1 2 C π , where C π is the input (baseemitter junction) capacitance of the active device [24], creating a similar effect to the application of a radial stub [47].…”

Section: A Ssda With 71 Db Gain and 200 Ghz Bandwidthmentioning

confidence: 99%

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Odedeyi

Giannakopoulos

Zirath

et al. 2020

IEEE Trans. Circuits Syst. I

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This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1 dB average gain and 200 GHz bandwidth; and the world's first M-SSDA, which has a 12 dB average gain and 170 GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250 nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date.

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Section: A Ssda With 71 Db Gain and 200 Ghz Bandwidthmentioning

confidence: 99%

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Odedeyi

Giannakopoulos

Zirath

et al. 2020

IEEE Trans. Circuits Syst. I

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“…The amplifier features a cascode gain cell with two identical InP DHBTs, each with an emitter area of 0.25 × 6µm 2 . The cascode configuration is favoured for the high input-output isolation it offers, as well as the high output impedance which advantageously reduces the loading on the output transmission line of the DA [13], [16]. The design is based on an Indium Phosphide process with f T /f max of 350 GHz / 600 GHz [17].…”

Section: Amplifier Design and Optimisationmentioning

confidence: 99%

Single-Stage and Multiplicative Distributed Amplifiers for 200GHz+ Amplification

Odedeyi

Giannakopoulos

Zirath

et al. 2019

2019 IEEE Asia-Pacific Microwave Conference (APMC)

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In this paper, we review the merit of the single stage distributed amplifier (SSDA) and consider the potential of its derivative multiplicative amplifier topologies (the cascaded and the matrix SSDA) for ultra-wideband amplification. We highlight the significant bandwidth advantage that the SSDA topology offers and the higher gain potential of multiplicative DAs compared to the conventional multi-stage DA. Furthermore, we describe how available design trade-offs may be used to offset inherent noise performance limitations of this family of distributed amplifiers. We also report a new SSDA MMIC with 7.1 dB gain at 200 GHz bandwidth and a high frequency gain tuning range of 5 dB to 12 dB, based on an Indium Phosphide DHBT process with 250 nm emitter width.

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“…The final circuit shown in Fig.1 utilizes one source degenerated inductor L s and one matching inductor L g to optimize the noise figure and input matching. Shunt-shunt feedback and noise cancelation techniques have also been adopted in previous LNA designs [4] [8]. We have compared these techniques in order to choose good balance between the input matching and noise optimization.…”

Section: Circuit Descriptionmentioning

confidence: 99%

“…Low noise figure with good input matching for constrained power consumption has been investigated by several research groups using a cascode structure [2][3] [4]. As mentioned in [5], cascode amplifiers are the best basic solution for the trade off between noise figure, bandwidth and stability.…”

Section: Introductionmentioning

confidence: 99%

GaAs wideband low noise amplifier design for breast cancer detection system

Yan

Krozer

Delcourt

et al. 2009

2009 Asia Pacific Microwave Conference

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Abstract-Modern wideband systems require low-noise receivers with bandwidth approaching 10 GHz. This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology. Source degeneration, gate and shunt peaking inductors are used to explore simultaneous wideband noise optimization and input power matching requirement. The low-noise amplifier circuit operates across a band of 0.3 to 10 GHz with a gain of around 14 dB and the measured noise figure NF below 1.5 dB up to 8 GHz. Measured small-signal results show good stability and very good agreement with simulated values. It is discussed in the paper that with more inductive peaking amplifier operation can be extended to even higher frequency, resulting in an even larger bandwidth.

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A wideband HEMT cascode low-noise amplifier with HBT bias regulation

Cited by 15 publications

References 4 publications

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Single-Stage and Multiplicative Distributed Amplifiers for 200GHz+ Amplification

GaAs wideband low noise amplifier design for breast cancer detection system

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