A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS

Abstract

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gateinductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 m CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within ˙0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure (NF) and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm 2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.

Design of a 2-18GHz ultra-wideband MMIC low noise amplifier

“…The specific circuit diagram is shown in Figure 2. Figure 2 In Figure 2(b), 𝐿 𝑔1 can be regarded as the pre-matching of the gate, and 𝐿 𝑔1 and the microstrip line 𝐿 𝑠 used for the source degenerate structure can achieve both impedance matching and noise matching at the input [23,24]. Inductors 𝐿 𝑑2 and 𝐿 𝑑3 can be used to compensate for the loss increased by the parasitic capacitance of the whole amplifier circuit with the increase of frequency, so as to improve the gain at high frequency, broaden the bandwidth and improve the gain flatness [25].…”

Design of a Capacitor Cross-Coupled Common Gate Wideband Low Noise Amplifier with Noise Canceling Technique

“…Since it was originally proposed to reduce the noise figure of the feedback amplifiers at low gigahertz frequency ranges ,the noise-canceling technique has become a popular technique for designing wideband LNAs [14] [15].Fig. 3.shows the realization of noise cancelling technique used in common source structure ,which utilize the feedback resistance Rf to form a feedback loop to implement the cancellation of noise.…”