A Wideband Model for On-Chip Interconnects With Different Shielding Structures

Kang, Kai; Cao, Xin; Wu, Yunqiu; Gao, Ziyang; Tang, Zongxi; Ban, Yong‐Ling; Sun, Lingling; Wang, Yin

doi:10.1109/tcpmt.2017.2732445

Cited by 9 publications

(4 citation statements)

References 22 publications

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“…TLs were fabricated on a CMOS process; their cross section is shown in Figure 3a. These lines present lengths of l = 1380 µm, 2450 µm and 4600 µm and include a metal patterned ground shield separating a distance h = 0.8 µm from the signal trace [14,15]. Moreover, the lines are terminated with ground-signal-ground (GSG) pad arrays, which allow for the measurement of S-parameters using coplanar RF probes with a 150 µm pitch.…”

Section: A Lines On-chipmentioning

confidence: 99%

Identifying and Modeling Resonance-Related Fluctuations on the Experimental Characteristic Impedance for PCB and On-Chip Transmission Lines

Rodriguez-Velasquez¹,

Torres‐Torres

Murphy‐Arteaga

2023

Electronics

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It is well known that the fluctuations in experimentally obtained characteristic impedance versus frequency curves are associated with resonances originated by standing waves bouncing back and forth between the transitions at the transmission line terminations. In fact, microwave engineers are aware of the difficulty to completely remove the parasitic effect of these transitions, which makes obtaining smooth and physically expected frequency-dependent curves for the characteristic impedance a tough task. Here, we point out for the first time that these curves exhibit additional fluctuations within the microwave range due to standing waves taking place within the transition itself. Experimental verification of this fact was carried out by extracting this fundamental parameter from measurements performed on on-chip and printed circuit board (PCB) lines using probe pad adapters and coaxial connectors. We demonstrate that the lumped circuit approach to represent the transitions lacks validity when the additional fluctuations due to the connectors become apparent, and we propose a new model including transmission line effects within the transition.

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Section: A Lines On-chipmentioning

confidence: 99%

Identifying and Modeling Resonance-Related Fluctuations on the Experimental Characteristic Impedance for PCB and On-Chip Transmission Lines

Rodriguez-Velasquez¹,

Torres‐Torres

Murphy‐Arteaga

2023

Electronics

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“…With the development of millimeter-wave applications such as 60GHz wireless communications [1,2] and 77GHz automotive radars [3,4,5], on-chip integrated systems have attracted much more attention. As a flexible and reliable passive element, the transmission line becomes quite attractive in implementing matching functions for RF (radio frequency) integrated circuits [6,7]. However, the on-chip transmission lines need to be precisely modeled to support the corresponding designs [8,9].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the parameter extraction for on-chip transmission lines

Yang

Zhang

et al. 2020

IEICE Electron. Express

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Matching networks for ultra-high frequency chips are susceptible, and accurate extraction of passive devices parameters is essential. For on-chip transmission lines, the authors present a precise method of extracting transmission line propagation constant from two transmission line measurement structures with different lengths. After obtaining the propagation constant based on this method, to get the transmission line's characteristic impedance, this paper conducts a Y-Z model analysis of the signal pad and gives mathematical expressions. This approximation method can obtain the characteristic impedance of the transmission line without solving the signal pad's model parameters. The propagation constant and characteristic impedance derived from the methods proposed are compared with the corresponding electromagnetic simulation results, achieving fairly good agreement from 250 MHz to 110 GHz.

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“…The transition region at intermediate frequencies is not well captured. Furthermore, proximity effects between conductors are not included [3]. On the other hand, field solution approaches are usually time‐consuming and may not be compatible with circuit simulators (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…To account for the frequency-dependent series resistance and inductance, empirical formulas (e.g. [2,3]) and field solution approaches (e.g. [4,5]) have been proposed.…”

mentioning

confidence: 99%

Parameterised equivalent circuit model of frequency‐dependent resistance and inductance for on‐chip coplanar waveguides up to 110 GHz

Zheng

Weisshaar

2018

Electron. lett.

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A parameterised wideband equivalent circuit model capturing the per-unit-length (p.u.l.) frequency-dependent resistance and inductance of on-chip coplanar waveguides (CPWs) is presented. The parameterised model for on-chip CPWs is suitable for various process nodes and over a large geometry range with signal line widthto-thickness ratios w s /t between 1 and 15 and spacing-to-thickness ratios s/t between 0.25 and 15. The model has been validated by both EM simulation and measurements of fabricated test chips. The model is accurate to within 10% over the normalised geometry range. The model can easily be implemented into standard circuit simulators.

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A Wideband Model for On-Chip Interconnects With Different Shielding Structures

Cited by 9 publications

References 22 publications

Identifying and Modeling Resonance-Related Fluctuations on the Experimental Characteristic Impedance for PCB and On-Chip Transmission Lines

Identifying and Modeling Resonance-Related Fluctuations on the Experimental Characteristic Impedance for PCB and On-Chip Transmission Lines

Analysis of the parameter extraction for on-chip transmission lines

Parameterised equivalent circuit model of frequency‐dependent resistance and inductance for on‐chip coplanar waveguides up to 110 GHz

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