A1N Substrates with High Thermal Conductivity

Kurokawa, Y.; Utsumi, Kazuaki; Takamizawa, H.; Kamata, T.; Noguchi, Seiichiro

doi:10.1109/tchmt.1985.1136500

Cited by 118 publications

(37 citation statements)

References 4 publications

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“…The refractive index of deposited AIN films was measured to be 2 at 400°C substrate temperature and is comparable to excimer-laser-deposited AIN, which has a refractive index of 1.9 for a 400°C deposition temperature [23]. Moreover, AIN deposited at 400°C with the disc plasma downstream eVD exhibits a resistivity similar to that reported for bulk AIN ( 2::5 X 10 13 n cm ) [24].…”

mentioning

confidence: 66%

A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

Zhang

Luo

Sheng

et al. 1990

IEEE Trans. Plasma Sci.

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Abstract-Soft-vacuum-generated electron beams employed to create a large area plasma for assisting chemical vapor deposition (CVD) of thin films are reviewed. The electron beam plasma is used both directly, where electron impact dissociation of feedstock gases plays a dominant role, and indirectly in a downstream afterglow, where electron impact dissociation of feedstock reactants plays no role. Rather, photodissociation and metastable atom-molecule reactions dominate in the downstream afterglow. To better understand electron-beam-created plasmas using a slotted ring cathode, the transmitted beam spatial intensity profiles have been quantified from initial generation at a slotted line-shaped cold cathode through acceleration in the cathode sheath and propagation in the ambient gas. To better understand the role of photodissociation in downstream plasma-assisted CVD, the VUV output spectrum and VUV generation efficiency from electron-beam-excited plasmas have been measured. The properties of films deposited via both direct electron-beam-generated plasma-assisted CVD and downstream afterglow CVD are reviewed and compared to conventional plasma assisted CVD films. I. SOFT-VACUUM ELECTRON BEAM GENERAnONA. Thermionic Sources T HE conventional means of producing electron beams uses thermionic cathode sources to emit electrons, which are accelerated in an ambient pressure typically below 10-4 torr. Thermionic emitters have limited application because of the low required operating pressure and the likelihood of poisoning from ambients other than inert gases. Wide area ( > 10 em") electron beams are usually not generated from thermionic cathodes, further precluding the use of this type of source in many practical applications. B. Glow Discharge SourcesA glow discharge environment provides a simple means to produce wide-area electron beams without the need of Manuscript received April 3, 1989; revised May 30, 1990 either thermionic sources or acceleration in high vacuum. In general, there are two groups of electrons that emerge from the cathode sheath created in a gas discharge plasma. One group contains the electrons that have undergone many inelastic collisions with gas atoms and are less energetic and isotropic in direction. Another group is comprised of energetic and highly directed electrons that have been produced at the cold cathode and accelerated perpendicular to the cathode surface. These electrons are often called beam electrons. Five established methods to create soft-vacuum electron beams from a plasma are outlined next. 1) Cold Cathodes:Electrons are emitted from a cold cathode following bombardment of the cathode by energetic species (ions, metastables, and photons) whose energy exceeds the threshold for cold electron emission, which is roughly equal to the work function of the surface for pure metal cathodes. Ion-induced secondary emission usually dominates in a discharge, and the secondary emission coefficient varies with ion species, the work function, and the Fermi energy of the cathode [I]. Cold-cathod...

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mentioning

confidence: 66%

A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

Zhang

Luo

Sheng

et al. 1990

IEEE Trans. Plasma Sci.

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“…However, once the temperature reached at 1100 1C, a large amount of N 2 released through the CuO particles as a result of the dramatically interfacial reactions between AlN and CuO (Eqs. (2) and (3)). Pores formation occurred on the surface of thick film substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Concerning these type applications, a great deal effort has been dedicated in developing approaches for connecting metal with ceramic [2]. In accordance with this purpose, many metallization processes have been proposed, such as firing with high melting metals, e. g. W [3], Mo, Mn [4]; sputtering a thin Au, Pt and Ti film [5]; direct bond copper (DBC) [6] and thick film metallization with screen printing [7].…”

Section: Introductionmentioning

confidence: 99%

Morphology of thick film metallization on aluminum nitride ceramics and composition of interface layer

Zhang

Tang

et al. 2015

Ceramics International

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“…Al 2 O 3 ceramics is preferable for low cost industrial requirements, the typical conductivity of which is 27 W/mK. Other ceramics such as aluminum nitride [77] and beryllium oxide (BeO) with high thermal conductivities are not suitable for LED packaging due to cost. Aluminum silicon carbide (AlSiC) is evaluated as a potential ceramic substrate for LED because it can provide high thermal conductivity, compatible CTE with Si, and high strength and stiffness compared to Cu and Al [78].…”

Section: Thermal Managementmentioning

confidence: 99%

Status and prospects for phosphor-based white LED packaging

Liu

Wang

et al. 2009

Front. Optoelectron. China

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The status and prospects for high-power, phosphor-based white light-emitting diode (LED) packaging have been presented. A system view for packaging design is proposed to address packaging issues. Four aspects of packaging are reviewed: optical control, thermal management, reliability and cost. Phosphor materials play the most important role in light extraction and color control. The conformal coating method improves the spatial color distribution (SCD) of LEDs. High refractive index (RI) encapsulants with high transmittance and modified surface morphology can enhance light extraction. Multi-phosphor-based packaging can realize the control of correlated color temperature (CCT) with high color rendering index (CRI). Effective thermal management can dissipate heat rapidly and reduce thermal stress caused by the mismatch of the coefficient of thermal expansion (CTE). Chip-on-board (CoB) technology with a multilayer ceramic substrate is the most promising method for high-power LED packaging. Low junction temperature will improve the reliability and provide longer life. Advanced processes, precise fabrication and careful operation are essential for high reliability LEDs. Cost is one of the biggest obstacles for the penetration of white LEDs into the market for general illumination products. Mass production in terms of CoB, system in packaging (SiP), 3D packaging and wafer level packaging (WLP) can reduce the cost significantly, especially when chip cost is lowered by using a large wafer size.

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A1N Substrates with High Thermal Conductivity

Cited by 118 publications

References 4 publications

A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

Morphology of thick film metallization on aluminum nitride ceramics and composition of interface layer

Status and prospects for phosphor-based white LED packaging

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