The effect of several additives, such as CaC2, CaO, Y& and C, on thermal conductivity of hot-pressed AlN ceramics was investigated. The addition of CaC2 reductant was found to be useful for achieving high thermal conductivity of 180 W/(m. K) at room temperature. The characterization of AIN ceramics with CaCz additive was performed by chemical analysis of Ca, C, and 0 and microstructural analysis using transmission electron microscopes equipped with an energydispersive X-ray analyzer and an electron energy loss spectrometer. The major influence on high thermal conductivity is the disappearance of a thermal barrier caused by oxygen impurities at the grain boundary.

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ELECTROLESS PLATED AND THIN FILMS 2345 field distribution. Br " 5/Hc for the Co-Ni-P is 14.3, compared to 23.3 for the Co-P. The decrease in demagnetization parameter resulted in an increase in DT0 from 18.5 KFCI for Co-P to 22 KFCI for Co-Ni-P (Fig. 8) when tested with a thin film head with gap length 30 win., 15 turns, at a fly height of 8 win. Therefore, when appropriately deposited, Co-Ni-P films can support higher recording density compared to Co-P films. ABSTRACTHighly thermally conductive aluminum nitride ceramics were metalized by an electroless plated Ni-P film for the purpose of utilizing them in practical electronic circuit substrates. Aluminum nitride substrates were effectively etched by NaOH solution, and the adhesion strength between A1N and the Ni-P film was found to increase with an increase in surface roughness. At Ra value greater than 0.63 ~m, adhesion strength increased to 2.0 kg mm -~, and a maximum of 3.0 kg mm -~ was obtained at Ra = 1.24 ~m. The NaOH-etched A1N substrates, however, had a higher adhesion strength than sub-) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.35.40.137 Downloaded on 2015-06-26 to IP