Metalization of AlN Ceramics by Electroless Ni‐P Plating

Osaka, Tetsuya; Nagata, Hiroto; Nakajima, Eiji; Koiwa, Ichiro; Utsumi, Kazuaki

doi:10.1149/1.2108405

Cited by 34 publications

(18 citation statements)

References 13 publications

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“…The most widely applied methods are the deposition of a Ni or Ni alloy layer on the surface of the thermoelectric element [18][19][20][21][22]. That is, an Ni or Ni alloy acting as a diffusion barrier is incorporated by electroplating, electroless plating, physical vapor deposition (PVD), or the thermal spraying process.…”

Section: Introductionmentioning

confidence: 99%

Effect of Surface Roughness and Electroless Ni–P Plating on the Bonding Strength of Bi–Te-based Thermoelectric Modules

Bae

Kim

et al. 2019

Coatings

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In this study, electroless-plating of a nickel-phosphor (Ni–P) thin film on surface-controlled thermoelectric elements was developed to significantly increase the bonding strength between Bi–Te materials and copper (Cu) electrodes in thermoelectric modules. Without electroless Ni–P plating, the effect of surface roughness on the bonding strength was negligible. Brittle SnTe intermetallic compounds were formed at the bonding interface of the thermoelectric elements and defects such as pores were generated at the bonding interface owing to poor wettability with the solder. However, defects were not present at the bonding interface of the specimen subjected to electroless Ni–P plating, and the electroless Ni–P plating layer acted as a diffusion barrier toward Sn and Te. The bonding strength was higher when the specimen was subjected to Ni–P plating compared with that without Ni–P plating, and it improved with increasing surface roughness. As electroless Ni–P plating improved the wettability with molten solder, the increase in bonding strength was attributed to the formation of a thicker solder reaction layer below the bonding interface owing to an increase in the bonding interface with the solder at higher surface roughness.

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Section: Introductionmentioning

confidence: 99%

Effect of Surface Roughness and Electroless Ni–P Plating on the Bonding Strength of Bi–Te-based Thermoelectric Modules

Bae

Kim

et al. 2019

Coatings

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“…The process of joining AlN to metals and ceramics has been investigated by many researchers. For combination with metals, many reports have been published on directly joining AlN to copper, joining it to metals using active fillers, and the electroless plating of copper/nickel films on AlN substrates . Joining AlN to massive ceramic materials has also been reported.…”

Section: Introductionmentioning

confidence: 99%

Formation Process of AlN Through Precursors and Its Application to Joining AlN Ceramics

2012

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Formation process of AlN from urea and aluminum chloride hexa-hydrate (N/Al = 60) under nitrogen is investigated. An aluminum hexa-urea complex crystallizes on mixing the two raw materials at room temperature. The complexes react with excess urea and/or its decomposed products, such as biuret above 160°C, and form an amorphous phase containing Al, N, C, and O around 400°C after releasing volatile products. The resultant amorphous phase undergoes changes as the temperature increases, and then crystalline carbon with a fullerene-like XRD pattern forms at 850°C. AlN crystallization follows the decomposition of the fullerene-like crystals. At the AlN precursor stage, a large number of radicals (g = 2.0029 and S = 1/2) are detected by ESR. The radicals are assumed to be due to dangling bonds with an unpaired electron in amorphous carbon. Joining AlN ceramics is conducted using the 850°C product at the AlN precursor stage as the filler material, and is successfully achieved at temperatures above 1000°C. The shear strengths of the joints formed at 1500°C are 88 ± 29 MPa.

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“…Good wetting for Ni alloyed with Ti, Zr, and Hf was reported [5]. A wide variety of processes for metallization of AlN have been proposed, such as thick film metallization [6]- [11]; soldering [12] and brazing [13]; direct bonding [14]; cofiring with high melting point metals [15]; electroless plating [16]- [18]; and hot pressure bonding [19]. Among these metallization methods, the electroless Ni (EN) plating method appears to be the most appropriate one because the thermal expansion coefficient [20(a)] lower than that of Cu and also closer to that of AlN ceramic.…”

Section: Introductionmentioning

confidence: 99%

“…Although electroless Ni (EN) plating is a promising method for metallizing the oxide ceramics, such as few of them concentrate on AlN [16], [17]. It has been reported that the adhesion strength of EN film is related to the surface morphology of AlN substrate.…”

Section: Introductionmentioning

confidence: 99%

“…Further etching progressively through grains, grain boundaries, and triple junctions enlarges the space between AlN grains, and thus results in a decrease of the adhesion strength. However, the etching behavior of -sintered AlN substrate [22], [23] and its relation to the adhesion strength of EN film [16], [17], as well as the advanced bondability of the EN-plated AlN substrate with Cu metal are still not yet fully understood.…”

Section: Introductionmentioning

confidence: 99%

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Bonding mechanism of electroless Ni-P film with AlN substrate and Cu foil

Young

Duh

1998

IEEE Trans. Comp., Packag., Manufact. Technol. A

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Electroless Ni (EN) plating method is employed to metallize Y2O3-doped AlN ceramic substrates with different surface morphologies, including the as-received, polished, and etched AlN. The EN-plated AlN substrate is bonded with the Cu foil to form a sandwich-like AlN-EN/Cu/EN-AlN assembly by hot pressing in vacuum with a pressure of 6.5 MPa for 30 min. The bonding strength of the joint is determined by the adhesive abilities of EN/AlN and EN/Cu interfaces. Bonding between the Cu foil and the EN film is achieved by the interdiffusion of Cu and Ni atoms to form a solid solution interlayer, while the EN film is adhered on the AlN substrate mainly by the mechanical interlocking through the rough interface, etched holes, and open pores. At the bonding temperatures lower than 400 C, no reaction occurs between the Cu foil and the EN film. Increasing bonding temperature enhances the interdiffusion of Cu and Ni to form a strong bonded solid solution interlayer. However, the depletion of the element Ni in EN film results in the formation and enlargement of the pores at EN/AlN interface, which makes a poor adhesion between EN film and AlN substrate. An optimum bonding temperature is observed around 600 and 700 C for various surface conditions of AlN substrates. Theoretical calculations of the residual thermal stresses in AlN, EN, and Cu layers with respect to the bonding temperatures are related to the variation of the bonding strengths. The relations of the adhesion strengths, interfacial morphologies, elemental distribution, and calculated residual stresses is proposed.Index Terms-Bonding strength, electroless Ni, interfacial morphology, mechanical interlocking.

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Metalization of AlN Ceramics by Electroless Ni‐P Plating

Cited by 34 publications

References 13 publications

Effect of Surface Roughness and Electroless Ni–P Plating on the Bonding Strength of Bi–Te-based Thermoelectric Modules

Effect of Surface Roughness and Electroless Ni–P Plating on the Bonding Strength of Bi–Te-based Thermoelectric Modules

Formation Process of AlN Through Precursors and Its Application to Joining AlN Ceramics

Bonding mechanism of electroless Ni-P film with AlN substrate and Cu foil

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