“…In 2012, Fu et al have reported that the p‐type FeNbSb based half Heusler compound has the figure of merit ZT >1 (1.1) at 1100 K temperature, 19 which is a unique achievement in the thermoelectric materials at high temperature. In the last few years some of the Quaternary Heusler compounds, for example, CoFeCuZ (Z = Al, As, Ga, In, Pb, Sb, Si, Sn), 20 CoZrMnX (X = Al, Ga, Ge, In), 21 FeMnTiAl, 22 CoFeYGe (Y = Ti, Cr), 23 and FeVRuSi 24 have been investigated using Density Functional Theory. They are announced to have low thermal conductivity, enriched by higher values of Seebeck coefficient, better responses of electrical conductivity with mechanical stability, and are finally regarded as the efficient thermoelectric materials 25 of the future.…”