Ab initio prediction of enhanced thermoelectric performance from bulk to monolayer Sb2S2Te

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

“…The increment in the optical bandgap reduces the number of defect states and transition probability and consequently decreases the carrier concentration with ion irradiation. The calculated N / m * values are much higher than the measured carrier concentration in the Sb 2 S 2 Te monolayer, which exhibited better thermoelectric characteristics …”

“…The calculated N/m* values are much higher than the measured carrier concentration in the Sb 2 S 2 Te monolayer, which exhibited better thermoelectric characteristics. 51 The dielectric behavior of the material is explained well in terms of two parameters: ε = ε r + iε i = (n + ik) 2 , where ε r represents real dielectric constant and ε i is the imaginary dielectric constant. ε r represents the deacceleration of a light wave while it is passing through the material medium, whereas the imaginary dielectric constant, ε i , provides information about the loss of energy through absorption inside the dielectric sample in the presence of an electric field because of dipole motion.…”