Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Abstract

This study investigates the effects of 30 keV proton ion irradiation on the structural, morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films. The retention of an amorphous nature and vibrational bonding rearrangements caused by ion irradiation demonstrate structural tailoring. The cumulative decrease in roughness with an increase in ion dose decreases the surface energy and optical absorption loss. With the blue shifting of the absorption edges, proton irradiation increased the optical transmittance and reflectance. The variation of fluence changes the optical bandgap and Urbach energy, which are induced by local structural changes caused by defects and disorder. The refractive index decreased considerably, which supports the Moss rule. Proton irradiation reduced the interband transition and average band energy gap of the system. However, ion irradiation increased optical losses while decreasing optical conductivity and dielectric characteristics. The third-order nonlinear susceptibility and nonlinear refractive index decreased significantly as the fluence increased. Such materials with optical tuning capabilities via ion fluence are essential for cutting-edge photonic and optoelectronic applications.

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag10In15S15Se60 films for optoelectronic applications

“…The relation is given as 3* ¼ 3 r + i3 i ¼ (n + ik) 2 , where 3 r and 3 i represent real and imaginary dielectric constants. The value of both 3 r and 3 i is evaluated by using the given equations, 59 3 r ¼ n 2 À k 2 and 3 i ¼ 2nk…”

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO2 Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

“…As presented in Figure b, with an increase in temperature, the refractive index at 525 nm gradually increases in the GeO 2 thin films from 1.75 to 1.96, which does not follow the Moss rule. , Some reports demonstrate such unusual behavior. Scientists have manifested similar phenomena through precise tailoring of the microstructure, nanocomposite, and surface texturing.…”

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

“…48 The Swanepoel envelope method is employed for refractive index (n) estimation for these laser-irradiated films. 2 According to this envelope method, the first approximated refractive index "n 1 " is calculated for the region of weak and moderate absorption by…”

“…where "χ (1) " represents the linear part of polarization and "χ (2) " and "χ (3) " represent the second-order and third-order non-linear susceptibilities, respectively. Second-order non-linear susceptibility vanishes in centrosymmetric media while possessing a non-zero value in the systems lacking inversion symmetry.…”