Ab initio study of avalanche breakdown in diamond for power device applications

Band structures for short-period (InAs)n(GaSb)nsuperlattices calculated by the quasiparticle self-consistent GW method

“…For n = 4, we observe that a few bands near the CBM=VBM are clearly separated from other bands along the Γ-Z line, that is, the so-called miniband structures, although they are not separated along other directions. Since the band structures are important for determining the acceleration of electrons=holes under an electric field, they can be involved in the dark current via the Auger process 34) of creating carriers. A possible method to reduce the dark current can be the inplane confinement (quantum-wire-like) such that the minibands are completely separated from other bands.…”

Design of a normally-off diamond JFET for high power integrated applications

“…This model is shown in equation 5, where E is the electric field and the coefficients implemented in this study and in the literature, are listed in table 2. The simulations using the II coefficients in the literature [45,46] do not fit the reported JFET results. Therefore, the values listed in Table 2 are adopted in this study.…”

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

“…Several works for determining these impact ionization coefficients have been performed by extracting them under high electric fields. [13][14][15] Recently, Hiraiwa and Kawarada, and Kamakura et al have studied the avalanche breakdown process by extracting impact ionization coefficients (IICs) in Chynoweth's form from an arbitrary relationship between breakdown voltage and doping density, 16,17) and from the high-field carrier transport using a full-band Monte Carlo (FBMC) method based on ab initio calculations, 18) respectively. However, if the breakdown voltage occurring in the devices is not only due to an avalanche process, can the fitted models lead to an extrapolation of the local analysis of avalanche phenomena?…”