Ab initio study of gallium arsenide surface passivation by sulfur

Gayen, Sanjukta; Ermler, Walter C.; Sandroff, C. J.

doi:10.1021/j100172a046

Cited by 5 publications

(1 citation statement)

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“…The performance of most semiconductor-containing devices is critically dependent on the electronic properties of the semiconductor surface, especially the surface band bending ( V s ) and the surface recombination velocity (SRV). , These properties, in turn, depend on the density and energy distribution of surface states . Because the surface state properties are controlled by the chemistry of the surface, much effort has been devoted to developing chemical treatments (both inorganic − and organic 12-21 ) that modify the surface states and hence the surface electronic structure in a desired manner.…”

Section: Introductionmentioning

confidence: 99%

Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

et al. 1999

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We present "design rules" for the selection of molecules to achieve electronic control over semiconductor surfaces, using a simple molecular orbital model. The performance of most electronic devices depends critically on their surface electronic properties, i.e., surface band-bending and surface recombination velocity. For semiconductors, these properties depend on the density and energy distribution of surface states. The model is based on a surface state-molecule, HOMO-LUMO-like interaction between molecule and semiconductor. We test it by using a combination of contact potential difference, surface photovoltage spectroscopy, and time-and intensity-resolved photoluminescence measurements. With these, we characterize the interaction of two types of bifunctional dicarboxylic acids, the frontier orbital energy levels of which can be changed systematically, with air-exposed CdTe, CdSe, InP, and GaAs surfaces. The molecules are chemisorbed as monolayers onto the semiconductors. This model explains the widely varying electronic consequences of such interaction and shows them to be determined by the surface state energy position and the strength of the molecule-surface state coupling. The present findings can thus be used as guidelines for molecule-aided surface engineering of semiconductors.

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Section: Introductionmentioning

confidence: 99%

Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

et al. 1999

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Principles and Applications of Semiconductor Photoelectrochemistry

Tan

Laibinis

Nguyen

et al. 1994

Progress in Inorganic Chemistry

185

131

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A new class of self‐assembled monolayers: Organic thiols on gallium arsenide

Bain

1992

Advanced Materials

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The spontaneous assembly of long chain thiols on the clean oxide‐free surface of gallium arsenide has recently been reported by a group at Penn State University. In the past, the substrates on which this was possible were restricted to the group 10 and 11 metals Au, Ag, Pt, and Cu, and the oxides of silicon, aluminum and silver. The work and its consequences for GaAs‐based microelectronics are discussed.

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Ab initio study of gallium arsenide surface passivation by sulfur

Cited by 5 publications

References 0 publications

Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

Principles and Applications of Semiconductor Photoelectrochemistry

A new class of self‐assembled monolayers: Organic thiols on gallium arsenide

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