Absorption of the sun spectrum in silicon thin films
is imperative
to a range of technologies concerned with harvesting of the solar
energy. Silicon surfaces decorated with subwavelength structures offer
an attractive paradigm for the generation of broadband absorption
enhancement. The integration of additional deep subwavelength features
can provide further enhancement in broadband absorption. It was recently
shown that the incorporation of nanopillar arrays with deep subwavelength
sidewall structures (DSSS) can increase the omnidirectional broadband
absorption performance. These arrays are referred to as DSSS arrays.
In the current work, a numerical examination of the underlying light
trapping mechanisms of such systems is presented. It is shown that
the incorporation of DSSS concludes increase in the absorption cross-section
of the individual structures composing the arrays. Particularly, enhanced
absorption cross-section is obtained for sparse arrays which is indicative
that the DSSS induces additional scattering inside the individual
structures. In dense nanopillar arrays, the absorption cross-section
decreases but the overall broadband absorption of the arrays increases
due to the increase in material density. In dense DSSS arrays, further
enhancement in broadband absorption, compared with the NP arrays,
is calculated due to optical interactions between adjacent structures
which yield an elevated absorption cross-section. Overall, the increase
in broadband absorption in compact DSSS arrays is on account of the
elevated light trapping induced by the DSSS; the presence of DSSS
increases both the scattering inside the individual structures as
well as the scattering between adjacent structures.