Abatement of hazardous ion implant gases: experimental results

Arnó, Josep; Boyd, W.; Rendon, M.J.; Romig, T.

doi:10.1109/iit.1999.812097

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…In particular, optimum scrubber design requires comprehensive knowledge of the nature and concentration of species emitted, overall gas flow rates, and discharge frequencies exhausted by each specific pump. We completed such characterization study on a high current Applied Materials xR80 ion implanter [2] and recently, on a high-energy Axcelis 200 mm GSD-VHE tool [3]. The valuable information gathered in these studies was used to develop a customized dry scrubber sized to abate the effluent acid and hydride gases identified.…”

Section: Introductionmentioning

confidence: 99%

Developments in the abatement of ion implant process effluents

Arnó¹,

Sweeney²,

Marganski³

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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The toxic and reactive nature of the materials utilized during ion implantation generates safety and environmental challenges. Recent introduction of reduced-pressure gas sources alleviated many concerns associated with delivering dopant species into the tool. However, materials not implanted onto wafers are instantly exhausted from the tool through roughing pumps or accumulated and later discharged using cryo pumps. Both pumps contribute ballast or carrier gas flows (typically nitrogen) resulting in tool effluent streams containing low concentrations of hydride and/or acid species. Due to their toxicity, point-of-use abatement methods are recommended in order to minimize the risk of human exposure or release into the environment.Chemisorption-based technologies are the method of choice for the removal of highly toxic materials to levels below threshold values. This paper describes recent developments related to the performance of an integrated zero footprint dry scrubber. Individual scrubber canisters were installed at the exhaust of roughing and cryo-pumps of an Axcelis GSD-VHE tool at Axcelis Technologies Inc. (Beverly, MA, USA).The abatement efficiencies and pressure drops of the abatement tools were characterized during implantation of common dopant species and cryo-regeneration. Highly sensitive hydride and acid sensors were used to monitor the exhausts of the abatement devices while scrubber inlet concentrations were analyzed using FT-IR techniques. Comparison of inlet and outlet concentrations provided information about the effectiveness of the scrubber. Pressure drop information was collected during chamber pumpdown, implantation, and cryo-regeneration. Pressure-drop and scrubbing efficiency will be periodically examined to validate long term operation of the abatement device..Keywords-FT-IR, implanter abatement, pressure drop, arsine, phosphine, boron trifluoride.

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Section: Introductionmentioning

confidence: 99%

Developments in the abatement of ion implant process effluents

Arnó¹,

Sweeney²,

Marganski³

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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Ion Implantation Technology

Matsuo¹,

Takaoka²

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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Decomposition of Boron Trifluoride in the RF Plasma Environment

Wang

Tsai

Hsieh

et al. 2003

Aerosol Air Qual. Res.

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Boron trifluoride (BF 3 ) is the most commonly used gas for implanting ions of the N-type dopant boron. BF 3 is non-flammable and does not support combustion, but is toxic when inhaled and corrosive to the skin. A radio frequency (RF) plasma system used to decompose BF 3 was examined. The BF 3 decomposition fractions (η BF3 ) were determined in effluent gas streams of BF 3 /CH 4 /Ar, BF 3 /O 2 /Ar and BF 3 /O 2(glass) /Ar plasma systems. The by-products detected in the BF 3 /CH 4 /Ar plasma system were CO, CO 2 , SiF 4 , HF and boron-carbon compounds. The by-products detected in the BF 3 /O 2 /Ar plasma system were B 2 O 3(s) and SiF 4 . Theη BF3 in the BF 3 /CH 4 /Ar plasma system was 49.8%, higher than that in the BF 3 /O 2 /Ar and BF 3 /O 2(glass) /Ar plasma system. However, the amount of decomposed BF 3 divided by the input energy (E BF3 , energy efficiency) in the BF 3 /O 2(glass) /Ar plasma system was greater than that in the BF 3 /CH 4 /Ar and BF 3 /O 2 /Ar plasma systems. Moreover, the photo images of depositions of different reacting gases O 2 , H 2 with BF 3 were also compared. The reaction in the BF 3 /O 2 /Ar plasma system generated B 2 O 3 fine particles and led to the deposition of a white substance on the surface of the reactor. The η BF3 was only around 25% for mixing with O 2 , even when the input power exceeded 120 Watts, but the generation of fine particles in the system warrants much more investigation.

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Abatement of hazardous ion implant gases: experimental results

Cited by 3 publications

References 2 publications

Developments in the abatement of ion implant process effluents

Developments in the abatement of ion implant process effluents

Ion Implantation Technology

Decomposition of Boron Trifluoride in the RF Plasma Environment

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