aBCD18 - An advanced 0.18um BCD technology for PMIC application

Park, Nam-Kyu; Cha, Jaehan; Lee, Kyung-Ho; Jeon, Haeung; Choi, Hwan Jun; Kim, Juho; Kim, Sungoo; Oh, In-Seok; Park, Eungryul; Chae, Jinyoung; Kang, Hyung-Geun; Oh, Intaek; Yoon, Han Sub

doi:10.1109/ispsd.2009.5158044

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“…The reason for assumption (1) is that two-step diffusion processes of the impurity atoms are often used in modern planar technologies OE8 . A fixed quantity of impurity atoms is predeposited upon the semiconductor material during the two-step diffusion process.…”

Section: Theorymentioning

confidence: 99%

A simple expression for impurity distribution after multiple diffusion processes

Hu¹,

Chen²

2010

J. Semicond.

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There are several diffusion processes with different temperatures in modern semiconductor technology. The impurity distribution after these diffusion processes is analyzed and a simple expression for describing the distribution is given. It is found that the impurity distribution after multiple diffusion processes can be characterized with an effective diffusion length. The relation between this effective diffusion length and the diffusion lengths of each diffusion process is given and shows itself to be very simple and instructive. The results of the expression agree well with numerical simulations by using SUPREM Ⅳ. An example of the application of the expression is also shown.

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Section: Theorymentioning

confidence: 99%