Ablation characteristics on silicon from ultrafast laser radiation containing single MHz and GHz burst pulses

Metzner, Daniel; Lickschat, Peter; Engel, Andy; Lampke, Thomas; Weißmantel, Steffen

doi:10.1007/s00339-022-05858-6

Cited by 9 publications

(3 citation statements)

References 63 publications

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“…Femtosecond laser material processing in the so-called GHz-burst mode has attracted much attention in the last few years. The first investigations of this laser-matter interaction regime were mainly focused on metal and semiconductor ablation and have shown a significant increase in the removal rate compared to the single pulse regime [1][2][3][4][5][6]. Other studies show a lower ablation efficiency for GHz-bursts than for multiple single pulses depending on the burst parameters, such as laser fluence and number of pulses per burst [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Balage,

Lafargue,

Guilberteau

et al. 2024

Micromachines

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In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 µm diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.

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Section: Introductionmentioning

confidence: 99%

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Balage,

Lafargue,

Guilberteau

et al. 2024

Micromachines

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“…Consequently, the arising laser pulse energies of up to some 100 μJ lead to a laser fluence that is significantly above the well-known optimum for maximizing the ablation efficiency and rate [24]. For scaling the laser pulse energies closer to the optimum ablation efficiency, so-called laser burst mode can be used to split a laser pulse into at least two and typically up to a few hundred intra-burst pulses with a temporal intra-burst interval in the nanosecond regime [24][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Picosecond laser microvia drilling of ABF material using MHz burst mode

Franz,

Häfner,

Bischoff

et al. 2023

Mater. Res. Express

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We report on a comprehensive study of laser percussion microvia drilling of Ajinomoto build-up film (ABF) material using an ultrashort pulsed laser in MHz burst mode. After laser processing, microvia drilling quality is being evaluated by the fabricated diameter and taper using laser scanning microscopy and metallography. The influences of the incubation effect, heat accumulation and shielding effects as a result of pulse to pulse interactions are being discussed on the ablation threshold, penetration depth and laser microvia drilling quality. We find that an increasing heat accumulation in MHz burst mode processing is responsible for the void formation and delamination of the insulating ABF layer. Therefore, the parameter clearance is introduced to evaluate these effects on the microvia sidewalls. For a comparable clearance, applying 2 intra-burst pulses achieves an average reduced taper of down to 19.5% compared to single pulse mode. At the same time, a reduced laser drilling time of 16.7% per microvia highlights the enormous potential of the MHz burst mode for laser drilling of ABF material in printed circuit board fabrication.

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“…In past decades, great improvement has been achieved in the field of femtosecond laser processing of solids, which has been an effective method to prepare new kinds of materials. Femtosecond laser can be used to process various kinds of materials, including metals 1 – 4 , semiconductors 5 – 8 , and dielectrics 9 – 11 . Femtosecond laser processing can achieve micro-structures 12 – 14 and doping 15 – 17 on solid surfaces.…”

Section: Introductionmentioning

confidence: 99%

Spatial distribution characteristics of plumes induced by femtosecond laser ablation of silicon in vacuum

Chen¹,

Ning²,

Zhang³

2023

Sci Rep

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The spatial distribution characteristics of plumes induced by femtosecond laser ablation of silicon in vacuum are studied by using spectroscopy. The plume spatial distribution clearly shows two zones with different characteristics. The center of the first zone is at a distance of approximately 0.5 mm from the target. Silicon ionic radiation, recombination radiation, and bremsstrahlung mainly occur in this zone, causing an exponential decay with a decay constant of approximately 0.151–0.163 mm. The second zone with a greater area, whose center is at a distance of approximately 1.5 mm from the target, follows the first zone. In this zone, the radiation from silicon atoms and electron-atom collisions dominates, leading to an allometric decay with an allometric exponent of approximately − 1.475 to − 1.376. In the second zone, the electron density spatial distribution is approximately arrowhead-shaped, which is potentially induced by collisions between ambient molecules and the particles in front of the plume. These results indicate that both the recombination effect and expansion effect play important roles and compete with each other in plumes. The recombination effect is dominant near the silicon surface, causing exponential decay. As the distance increases, the electron density decreases exponentially by recombination, causing a more intense expansion effect.

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Ablation characteristics on silicon from ultrafast laser radiation containing single MHz and GHz burst pulses

Cited by 9 publications

References 63 publications

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Picosecond laser microvia drilling of ABF material using MHz burst mode

Spatial distribution characteristics of plumes induced by femtosecond laser ablation of silicon in vacuum

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