Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Zhou, Kun; Ikeda, Masao; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Wen, Pengyan; Li, Deyao; Zhang, Liqun; Yang, Hui

doi:10.1016/j.jcrysgro.2014.09.049

Cited by 24 publications

(12 citation statements)

References 14 publications

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“…The In content and growth rate of the QW were in good accordance with those measured for a thicker ($45 nm) strained InGaN grown separately under the identical conditions as the QWs. 17 The MQW region was grown at a constant temperature of 733 C. After annealing to activate Mg in the p-type layers, the LED wafers were processed using a standard photolithography to fabricate 250 lm Â 400 lm chips. n-GaN was partly exposed by induction coupled plasma etching to make n-electrodes, while ITO was deposited on top of the p-type layer to make p-electrodes.…”

Section: Methodsmentioning

confidence: 99%

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Zhang

Ikeda

Zhou

et al. 2015

Journal of Applied Physics

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Articles you may be interested inStrain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate Appl.Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes Appl.Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Methodsmentioning

confidence: 99%

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Zhang

Ikeda

Zhou

et al. 2015

Journal of Applied Physics

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“…As shown in Fig. 2(c), when the InGaN growth rate increases to 0.0182 nm/s (corresponding to Sample S35), a large number of pits and black spots appear on the surface, caused by reduced migration time of adatoms on the growth surface with a larger InGaN growth rate [16]. The rough surface may be accompanied with a degraded material quality related to defects, which can form a large number of non-radiative recombination centers.…”

Section: Resultsmentioning

confidence: 96%

“…The possible reason for the degraded material quality is that the longer growth time gives impurity atoms in the reaction chamber more opportunity to be introduced into epitaxial layers. However, it is also well known that the PL intensity of InGaN is affected not only by the non-radiative centers dependent on the material quality [15,16], but also by the localization states which form the radiative recombination centers [7e9]. We will investigate this aspect below.…”

Section: Resultsmentioning

confidence: 99%

“…These 3 structures were denoted as Samples S15, S25, and S35 for the TEGa flux of 15, 25, and 35 sccm. The InGaN growth rate is almost linearly increased with increasing TEGa flow rate [16], but the growth time of InGaN QWs for these samples has to be adjusted to maintain a constant QW width, leaving the growth rate as a single variable. The method of growth rate control will be discussed in detail below in the experiment part of this article.…”

Section: Methodsmentioning

confidence: 99%

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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Zhao

Yang

et al. 2016

Superlattices and Microstructures

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“…The indium composition can vary due to growth temperature fluctuation of the substrate surface during MOCVD growth. Moreover, it has been reported that in close coupled showerhead reactors, the growth rate of GaN in InGaN layers can be enhanced by increasing TMIn flow [14], which makes the determination of InGaN composition and thickness much complex. This enhanced growth rate determined experimentally was taken into consideration in the HR-XRD fitting to accurately determine the thickness and composition of each sample.…”

Section: Methodsmentioning

confidence: 99%

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

et al. 2016

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The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

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Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Cited by 24 publications

References 14 publications

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

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