Abnormal junction leakage characteristics in titanium-capped cobalt disilicide

Kang, Chang-Yong; Kang, Dae-Gwan; Lee, Joo-Wan

doi:10.1063/1.371513

Cited by 10 publications

(6 citation statements)

References 9 publications

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“…19 However, in today's shallow junctions, maximum fields are typically above 10 5 V=cm, so that other field-enhancement mechanisms come into the arena. 17 For fields of a few 10 5 V=cm, trap-assisted tunneling (TAT) becomes important in silicon p-n junctions, as has frequently been reported. [20][21][22][23][24][25][26][27][28] Particularly the halo implantation and associated activation anneal have a strong impact on the reverse TAT current in ultra-shallow silicon p-n junctions.…”

Section: Introductionmentioning

confidence: 87%

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High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

Simoen

Eneman

González

et al. 2011

J. Electrochem. Soc.

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This paper critically reviews the different mechanisms impacting the current-voltage and capacitance voltage characteristics of complementary metal oxide semiconductor (CMOS) compatible p-n junctions. Special attention is given to the influence of high doping density=high electric fields, mechanical stress and the presence of a hetero-junction either at the junction or in the depletion region. The basic mechanisms reported in the literature are checked for their validity for state-of-the-art structures and processing techniques. Critical issues are pointed out and illustrated for advanced CMOS compatible hetero-junctions, where high-field effects, like trap-assisted tunneling (TAT) and band-to-band-tunneling (BTBT) play a prominent role. The presence of an isotype hetero-junction gives rise to frequency dispersion in the depletion layer capacitance, which becomes more pronounced in combination with grown-in or processing-induced defects at the hetero-interface. Finally, the challenges and opportunities for future devices are addressed.

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Section: Introductionmentioning

confidence: 87%

“…At moderate electric fields (E $ 10 4 V=cm) the area leakage current density can often be described in the frame of the Poole-Frenkel model. [14][15][16][17][18] The corresponding electric-field dependence is given by 18…”

Section: Introductionmentioning

confidence: 99%

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

Simoen

Eneman

González

et al. 2011

J. Electrochem. Soc.

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“…At moderate electrical fields (E~10 4 V/cm) it has been observed that often the area leakage current density could be described in the frame of the Poole-Frenkel model (12)(13)(14)(15)(16). The corresponding electric-field dependence is given by (15):…”

Section: High-field Leakage Mechanismsmentioning

confidence: 99%

(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions

Simoen¹,

Eneman²,

González³

et al. 2010

ECS Trans.

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This paper reviews the impact of the presence of a high doping density and/or high electric field on the current-voltage and capacitance-voltage characteristics of CMOS compatible p-n junctions. In the first instance, the basic mechanisms will be explained and illustrated by examples taken from the literature. Next, the field-induced leakage current of state-of-the-art and future technology nodes is discussed. It will be shown that in modern junctions, high-field effects, like trap-assisted tunneling (TAT) and band-to-band-tunneling (BTBT) play a prominent role.

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“…7,8) However, the former method may increase the junction and gate-source/drain leakage current owing to the diminishing of side wall spacers, and the latter method may also increase the leakage current through the abnormal growth of CoSi 2 at the edge of shallow trench insulators and sidewall spacers driven by the deoxidization of titanium. 9) In addition, it has been reported that the titanium cap process increases the temperature of CoSi 2 nucleation, 10) leading to an increase in R s . The trade-off between R s and junction leakage makes the optimization of the process difficult, particularly for the 65 nm node and more recent technologies with junction depths of 100 nm or less.…”

Section: Introductionmentioning

confidence: 99%

Dependence of Sheet Resistance of CoSi₂ with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process

Kawamura

Inagaki

Saiki

et al. 2007

jjap

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Since the distribution of gate resistance using cobalt silicide (CoSi 2 ) increases markedly for gate lengths of 30 nm or less, CoSi 2 is now being replaced by NiSi. However, CoSi 2 still has the advantages of a high thermal stability and a low degree of roughness at the interface between the silicide and silicon layers owing to the low degree of mismatch (1.2%) of between their lattice constants. We have achieved excellent sheet resistance (R s ) with a gate length L g ¼ 30 nm by optimizing the thickness of a cobalt capping layer of titanium nitride. The results shows an abnormal R s behavior, in which one of R s increases with capping layer thickness in the range of 10 -50 nm, while it decreases with increasing capping layer thickness in the range of 0 -10 nm. Unlike the results of a previous report [K. Goto et al.: IEDM Tech. Dig., 1995, p. 449], the variation in the R s with a gate length L g ¼ 30 nm is small, even without a TiN capping layer thickness down to 5 -10 nm. We suggest that the uniformity of R s is determined by the thickness of the CoSi layer after selective etching and the titanium concentration in the CoSi layer for capping TiN thicknesses of 10 -50 nm, while the uniformity is determined by the titanium concentration and the damage sustained during selective etching for TiN thickness of 0 -10 nm. For this optimization, CoSi 2 is applicable to the 65 nm node technology node or beyond.

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Abnormal junction leakage characteristics in titanium-capped cobalt disilicide

Cited by 10 publications

References 9 publications

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions

Dependence of Sheet Resistance of CoSi₂ with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process

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Abnormal junction leakage characteristics in titanium-capped cobalt disilicide

Cited by 10 publications

References 9 publications

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions

Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process

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Dependence of Sheet Resistance of CoSi₂ with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process