Abnormal Operation State Analysis and Control of Asymmetric Impedance Network-Based Quasi-Z-Source PV Inverter (AIN-qZSI)

Kayiranga, Thierry; Li, Hongbo; Lin, Xinchun; Shi, Yongsheng; Li, Hui

doi:10.1109/tpel.2016.2515995

Cited by 40 publications

(23 citation statements)

References 19 publications

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“…A 140-180/120-V, 1-kW, 100-kHz PV qZSI was built and used to verify the effectiveness of the proposed method. Kayiranga et al [123] focused on abnormal operation state analysis and control of asymmetric impedance network-based PV qZSI. WBG devices at high frequency could reduce the impedance network significantly.…”

Section: Single-phase Dc-ac Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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Section: Single-phase Dc-ac Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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“…The qZSI can have several modes of operations like the ZSI, where the authors in [16] have mentioned that some of these unwanted operating modes occur at low power factor or when a small impedance network inductance is utilized. Meanwhile, if the impedance network inductance is properly selected, these unwanted modes of operation can be avoided as discussed in [17], [18].…”

Section: A Conceptual Study Of the Qzsi Partial-load Operationmentioning

confidence: 99%

“…Moreover, the critical value of the impedance network inductance in order to avoid the unwanted abnormal modes of operation is mentioned in [16] for the ZSI. On the other hand, the qZSI abnormal modes of operation have been discussed in [17], [18], in which the critical value of the impedance network inductance is introduced in order to ensure a proper operation.…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of the Quasi-Z-Source Inverter for Wide Range of Operation

Abdelhakim

Blaabjerg

Mattavelli

2018

2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL)

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Impedance source inverters are experiencing a solid evolution since the first release of the traditional Z-source inverter (ZSI) in 2003, and among the abundant structures, quasi-ZSI (qZSI) is commonly studied for many applications due to its simple structure and having a continuous input current. Despite such attractive performance of the qZSI in various applications, it suffers from an inferior performance during partial-load operation, resulting in a limited range of operation. Hence, this paper introduces a conceptual study of the qZSI partial-load operation, demonstrating two important aspects in order to maintain the highest possible performance within the desired operating range. Firstly, a design aspect concerning the proper sizing of the impedance network inductance using linear and non-linear chokes is introduced. Secondly, a control aspect is proposed based on utilizing higher effective switching frequency through switching among different modulation schemes. Finally, a 3 kVA qZSI prototype is utilized in order to experimentally validate the reported analysis and discussions.

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“…[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The qZSI inherits all the advantages of the ZSI. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The qZSI inherits all the advantages of the ZSI.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the quasi-ZSI (qZSI) has been extensively researched as an up-to-date PCU configuration for applications in renewable and alternative energy sources. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The qZSI inherits all the advantages of the ZSI. In addition, the qZSI has the saliently attractive characteristics, such as lower component stresses and switching ripple to PV panel, a continuous current drawing from the PV source thus extra filtering capacitors can be saved, and a common dc rail between the source and inverter.…”

Section: Introductionmentioning

confidence: 99%

A novel modulation technique with interleaved‐and‐shifted shoot‐through state placement for quasi‐Z‐source inverters

Wang

Liu

Cheng

2017

Circuit Theory & Apps

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In this paper, a single-phase quasi-Z-source (qZS) inverter (qZSI), integrating the pulse width modulation (PWM) control with interleaved-and-shifted shoot-through state (STS) placement modulation technique, is proposed to simultaneously achieve both dc voltage boost and dc-ac inversion. Instead of placing the STS in both inverter legs simultaneously, the addressed method inserts the STS only in left/right inverter leg separately during the positive/negative half cycle of the output voltage to reduce switching losses and thermal stresses of the power devices. The STS shift is also studied to decrease the switching numbers of power devices and thus can improve the efficiency further. Theoretical analysis and design guidelines of the studied inverter are included. Improvement in effectiveness and performance of the devised scheme and modulation strategy are proved experimentally and compared with the previous studies on a built laboratory prototype. KEYWORDS photovoltaic generation system (PGS), pulse width modulation (PWM), quasi-Z-source inverter (qZSI), shoot-through state (STS)

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Abnormal Operation State Analysis and Control of Asymmetric Impedance Network-Based Quasi-Z-Source PV Inverter (AIN-qZSI)

Cited by 40 publications

References 19 publications

Review of GaN HEMT Applications in Power Converters over 500 W

Review of GaN HEMT Applications in Power Converters over 500 W

Analysis and Design of the Quasi-Z-Source Inverter for Wide Range of Operation

A novel modulation technique with interleaved‐and‐shifted shoot‐through state placement for quasi‐Z‐source inverters

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