Review of GaN HEMT Applications in Power Converters over 500 W

Abstract

Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

Desynchronizing Paralleled GaN HEMTs to Reduce Light-Load Switching Loss

“…5(c). According to (6), the generated current difference between i Ln and i Ln+1 (n = 1, 2, ..., N − 1) within the interval [τ n , τ n+1 ], i.e., ∆I L,∆τn , can be obtained as…”

“…To reduce the conduction loss and maintain high efficiencies in high-current and high-temperature conditions, it is desired to adopt high-current-rating GaN HEMTs. To date, the maximum current rating of commercial 650-V GaN HEMTs Manuscript is 60 A, i.e., GS66516T [6]. However, it is challenging to use unparalleled GS66516T devices (size: 9.0 mm × 7.6 mm × 0.54 mm) in high power applications (e.g., >10-kW motor drives) due to the caused high power loss and high thermal stress [7].…”

Design and Implementation of a GaN-Based Three-Phase Active Power Filter

“…Gallium nitride (GaN) is a widely discussed WBG semiconductor material that benefits power-switching device technology with higher voltage, higher switching frequency, higher power, and better high-temperature capability in power switches compared with conventional silicon (Si)-based technologies. It has been expected that GaN high electron-mobility transistors (HEMTs) can greatly enhance the performance of power converters with less than 1-kV power switching requirement [10][11][12].However, in open literature, the published papers on GaN HEMTs mostly address the manufacturing, device characteristics, driving, and switching performances [13]. Only two papers regarding GaN-based single-phase APFs were found in the Institute of Electrical and Electronics Engineers (IEEE)/Institution of Engineering and Technology (IET) Electronic Library (IEL) and ScienceDirect OnSite (SDOS) databases [14,15].…”

“…">Gallium Nitride (GaN) High Electron-Mobility Transistor (HEMT) and Its Driving RequirementsGaN HEMTs are believed to be the most promising solution for low-to medium-power applications because of their advantages such as higher breakdown voltage, lower on-resistance, and higher switching speed compared with conventional Si-based switching devices; these advantages can increase system efficiency and power density significantly and thus lead to new opportunities for achieving power converters with improved performance. Commercially available GaN HEMTs now achieve up to 650 V/50 A and 900 V/15 A [13].There are normally on and normally off GaN HEMTs. Normally on GaN HEMTs, also known as depletion mode (D mode) GaN HEMTs, are not popular because normally off switching devices are a common requirement for power converter applications.…”

“…Common suggestions include providing separate turn-on and turn-off driving paths, achieving minimized overlapping between driving and power loops, using Miller clamp and negative voltage sources to ensure reliable turn-offs, etc. [13].…”