Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength

Bennour, M.; Bouzaı̈ene, L.; Saidi, F.; Sfaxi, L.; Maâref, H.

doi:10.1016/j.jlumin.2013.12.031

Cited by 9 publications

(2 citation statements)

References 57 publications

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“…8), in which the continuous line is the best fit of the experimental points with the following temperature dependency. The Arrhenius equation looks like this: 30,31) where I 0 is the PL intensity at 10 K, E a1 is the activation energy and c 1 is the pre-factor including information about the escape rate of charge carriers. The values of E a1 give us clues about the depth of the confining potential, which carriers require to overcome the QW layer.…”

Section: Resultsmentioning

confidence: 99%

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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We report on combined photoluminescence (PL) and micro-Raman microscopy to study the effect of the V/III flux ratio on InAlAs ternary alloy grown on (311)A InP by metal-organic chemical vapor deposition. The PL of the type-II transition was studied in a wide range of temperatures (10–300 K) and excitation intensities. As the V/III flux ratio increased from 25 to 125, a redshift of the type-II transition was observed. Then, micro-Raman investigations showed the presence of an LO mode related to LO-like InAs in InAsP alloy at the inverted interface in our samples. Furthermore, we discuss the effect of laser excitation wavelength on the Raman spectrum. We also note that phonon peaks are very sensitive to different excitation sources (364 to 638 nm). At lower frequencies, disorder-activated longitudinal acoustic phonons are also observed, which consider the presence of potential fluctuations. This last generate the carrier’s localization, which confirmed by PL measurements. In all samples, a blueshift of the type-II transition is noted with increasing the excitation power, which may reflect the presence of carrier localization, whereas the temperature-dependent PL peak energy displayed unusual behavior, such as consecutive red–blue–redshift (S-shaped) behavior and an inverted N-shape in the full width at half maximum. These unusual behaviors are explained by carriers captured by localized recombination centers. Moreover, in the room temperature PL spectra two types of emission were detected at 1.3 and 1.55 μm.

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Section: Resultsmentioning

confidence: 99%

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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“…For T >> θ , we see that α represents just the limit of the magnitude of the first derivative, . The exponent “p” is related to the shape of the underlying electron-phonon spectral function [ 33 ]. The model provides a good fit to the experimental evolution which is confirmed by Fig.…”

Section: Theoretical Approachmentioning

confidence: 99%

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

et al. 2017

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This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.

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Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

et al. 2019

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Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength

Cited by 9 publications

References 57 publications

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

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