About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation

Pizzini, S.; Acciarri, M.; Leoni, E.; Donne, A. Le

doi:10.1002/1521-3951(200011)222:1<141::aid-pssb141>3.0.co;2-h

Cited by 36 publications

(23 citation statements)

References 26 publications

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“…The appearance of the D1 peak in the Ar/H plasma cleaned CZ samples, but not in the plasma cleaned FZ samples, may indicate the D1 luminescence observed in this case is related to oxygen. Thus the luminescence spectra maybe similar to that reported by Pizzini et al 12 as a result of oxygen precipitates. The presence of these precipitates in the depletion region would likely contribute to the degradation of the diodes electrical performance.…”

Section: Resultssupporting

confidence: 89%

“…To date, no consensus has been reached as to the microscopic structure of the defects resulting in the D1 band luminescence. 12,13 Pizzini et al 12 have demonstrated that an oxygen precipitation anneal can also result in the formation of D1 centers. Further the energy of these peaks shift asymptotically with anneal duration from about 0.817 eV to the commonly reported value of 0.807 eV.…”

Section: Resultsmentioning

confidence: 99%

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Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

Reidy

Varhue

Adams

et al. 2002

Journal of Applied Physics

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Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation Properly functioning pn junction diodes have been fabricated by a low temperature plasma enhanced chemical vapor deposition ͑PECVD͒ technique. The diodes were constructed such that the metallurgical junction was coincident with the starting substrate surface. The electrical quality of the diodes was quantified by measuring their reverse bias leakage current. Contrary to popular opinion, it has been shown that the PECVD process is inherently capable of producing device quality material, and rather it is the in situ plasma cleaning technique typically associated with this method that is the cause of poor electrical performance. The chemical and physical nature of defects caused by the plasma cleaning step have been investigated by various experimental techniques including photoluminescence, secondary ion mass spectroscopy, and atomic force microscopy. The plasma cleaning step has been linked in certain cases to the production of a photoluminescence signal in Czochralski grown Si wafers. Results show that the plasma clean is neither required nor desired in the low temperature growth of device quality epitaxial Si thin films.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

Reidy

Varhue

Adams

et al. 2002

Journal of Applied Physics

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“…The subsequent dissociation of these defects drives transient enhanced diffusion (TED) which is problematic for shallow junction formation and dopant activation, particularly in the case of boron 2, 4–6. A range of interstitial‐related luminescence centres can also be formed by irradiation of silicon 7–10. The W‐centre has a zero‐phonon emission line (W‐line or I 1) at 1218 nm and has been observed in electron, neutron and ion irradiated crystalline silicon 11–14.…”

Section: Introductionmentioning

confidence: 99%

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

McCallum

Villis

Johnson

et al. 2010

Physica Status Solidi (a)

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The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron‐doped substrates is extended to examine the effect of B implantation itself on W‐centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B‐implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

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“…The D1 lines in the array circuits in the 230-nm sacrificial oxidation sample become higher than those in the areas of 230-nm CMP and 230-nm removal samples. It is reported that the higher D1 line indicates the dislocation growth [11], [12].…”

Section: Resultsmentioning

confidence: 99%

An Application of Cathodoluminescence to Optimize the Shallow Trench Isolation Process

Mizukoshi

Shibusawa

et al. 2005

IEEE Trans. Semicond. Manufact.

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Cathodoluminessence (CL) spectroscopy was applied to optimize the shallow trench isolation (STI) process. The analysis of dislocations with CL spectroscopy could be performed during STI process steps. Then, the result of CL analysis was associated with the failure of a junction leakage current. Moreover, the analysis contributed to identifying the failure, including the root cause. As the result of CL analysis, nitride film thickness used as a mask layer of patterning was controlled at 190 nm or less. The dislocation analysis with CL spectroscopy can reduce the cycle time from 50 to 5 days.

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About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation

Cited by 36 publications

References 26 publications

Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

An Application of Cathodoluminescence to Optimize the Shallow Trench Isolation Process

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