About the energy levels of GaAs

Iskakova, Kulpash; Akhmaltdinov, Rif; Amanova, Aisara

doi:10.1088/1742-6596/510/1/012038

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…When they form mixed clusters, the Ga atoms become atoms of the faces, which require fewer bonds. All of them have filled cell structures, which we reported for III-V nanoparticles [5][6][7][8]. The obtained values of the discontinuities in the uniform increase and amplitude of the electronic densities ρ (Cu 2 O) n [9,10] in comparison with Ga m As n show that the interspaces are features of the material, and the nature of such bonds plays an important role.…”

Section: Methodssupporting

confidence: 58%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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In the plasma state, a polar semiconductor gallium arsenide (GaAs) is deposited on a nonpolar silicon (Si) matrix in the <111> direction. Further qualitative and quantitative analyzes were carried out with the resulting GaAs/Si structure on a plasma-beam device. We have chosen the optimal characteristics of this pulsed method for the deposition of GaAs from a plasma onto silicon (Si) created by a powerful ion beam. The optimal modes of the effect of temperature, electric field, and interval of pulse action on GaAs/Si quantum-well heteronanostructures were considered. In the implementation of application of this structure in applied works related to opto- and nanoelectronics, active elements of solar cells require defect-free compositions with ideal geometric parameters. Based on these experiments, the optimal mode of plasma influence on the formation of nanoclusters on the surface of the irradiated sample was chosen. SEM, EDS, and X-ray diffraction analysis methods were used to determine such parameters as the structure, microhardness, phase and elemental composition of the irradiated Si silicon surface, as well as the penetration depth of GaAs deposited on a single-crystal matrix. This work presents an experimental implementation of preparation of a gallium arsenide nanolayer and an applied theoretical analysis of the GaAs/Si heteronanostructure. We deposited gallium arsenide compounds from the plasma state on the surface of a silica crystal and studied the resulting structure by physicochemical methods.

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Section: Methodssupporting

confidence: 58%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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“…This makes a tetrahedral bond, similar to the one in a diamond lattice, but replaced with Ga and as where each Ga is connected to four other atoms. It shows ionic bonding with the presence of two types of atoms [37][38][39] (Figure 6). Figure 7 shows that the drawing of the energy band of the semiconductor, which demonstrates the bandgap along with valence and conduction electrons.…”

Section: Gaas Crystal Structurementioning

confidence: 99%

“…This decrease is attributed to the change in the structural phase related with phase transition of B3 ! B1 [23,36,[68][69][70][71].…”

Section: Densitymentioning

confidence: 99%