Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

Kafar, Anna; Ishii, Ryota; Gibasiewicz, Krzysztof; Matsuda, Yoshinobu; Stanczyk, Szymon; Schiavon, Dario; Grzanka, S.; Tano, Mikiya; Sakaki, Atsushi; Suski, T.; Perlin, P.; Funato, Mitsuru; Kawakami, Yoichi

doi:10.1364/oe.394580

Cited by 9 publications

(8 citation statements)

References 48 publications

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“…[5][6][7][8][9][10][11][12][13][14][15] Recently, attempts using substrates with local off-angle patterning have been proposed for InGaN-based multiwavelength light emitters. [16][17][18][19][20][21] Well-designed 3D shapes of photoresists are transferred to GaN surfaces, forming local off-angle distributions. A remarkable feature of this method is that not only stable planes exposed in the 3D structures by SAG but also unstable planes can be used.…”

mentioning

confidence: 99%

InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Matsuda

Funato²,

Kawakami³

2023

Appl. Phys. Express

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InGaN-based light-emitting diodes (LEDs) on convex lens-shaped GaN microstructures are fabricated. The gently sloping microstructures enable us to employ simple device processes similar to those for conventional planar LEDs. The fabricated LEDs show a clear rectifying property and broadband electroluminescence spectra ranging from ~380 to ~500 nm due to the multiwavelength emission properties of the InGaN quantum wells. Furthermore, the peak wavelength continuously changes from ~470 to ~410 nm within a particular current range.

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mentioning

confidence: 99%

InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Matsuda

Funato²,

Kawakami³

2023

Appl. Phys. Express

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“…This finding is consistent with previous reports. [26][27][28]34) Additionally, the wider wavelength shift mentioned above is attributed to the larger In composition variation (>10%) compared to that (4.5%) of the previous report. 27) This is most likely due to the larger maximum offangle.…”

mentioning

confidence: 54%

“…InGaN-based multiwavelength light emitters utilizing local off-angle variation have already been demonstrated. [24][25][26][27][28] Dróżdż et al fabricated InGaN LEDs on (0001) GaN surfaces with several hundreds of μm-scale patterns formed by grayscale photolithography and dry etching. 27) The local offangle ranges from 0.3 to 2.4°.…”

mentioning

confidence: 99%

Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures

Matsuda¹,

Funato²,

Funato³

et al. 2022

Appl. Phys. Express

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We fabricated InGaN quantum wells (QWs) on GaN microlens structures by employing a thermal reflow method. The peak emission wavelengths shift from ~490 nm on the top of the microstructure to ~400 nm on the bottom. This variation is attributed to the In composition distribution caused by the continuously changing off-angles from the (0001) plane. The obtained results suggest that not only stable planes exposed in microstructures by selective area growth technique but also unstable planes can be useful for InGaN-based microstructures with multiwavelength emission properties.

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“…Representative planes include the (0001), {11 22}, and {1 101}. On the other hand, multiple research groups have reported that planes slightly tilted from the (0001) plane (⩽∼5 • ) reduce the In compositions in InGaN quantum well (QW) emitters [48][49][50][51][52][53][54]. This property has led to these materials being used in broadband superluminescent diodes [50,52] and polychromatic LEDs [51,54].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, multiple research groups have reported that planes slightly tilted from the (0001) plane (⩽∼5 • ) reduce the In compositions in InGaN quantum well (QW) emitters [48][49][50][51][52][53][54]. This property has led to these materials being used in broadband superluminescent diodes [50,52] and polychromatic LEDs [51,54]. Interestingly, these 3D structures are formed artificially and can be composed of arbitrary unstable planes, thereby enhancing the structural controllability and, eventually, the spectral controllability.…”

Section: Introductionmentioning

confidence: 99%

A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

Funato,

Matsuda,

Kawakami

2023

Semicond. Sci. Technol.

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This paper reviews the development of three-dimensional (3D) structure-controlled InGaN quantum wells (QWs) for highly efficient multiwavelength emitters without using phosphors. Specifically, two representative structures are reviewed: 3D structures composed of stable planes with low surface energies and 3D structures composed of unstable planes. In the early stage of the research, 3D structures were grown on the (0001) polar plane through the selective area growth (SAG) technique based on metalorganic vapor phase epitaxy. Because GaN cannot grow on dielectric masks, different mask patterns were used to create various 3D facetted structures composed of stable facet planes. The InGaN QW parameters depend on the facet planes, which led to polychromatic emission, including white-light emission. After polychromatic light-emitting diodes (LEDs) on the (0001) polar plane were demonstrated, 3D QWs and LEDs were also demonstrated on the ( 1 ˉ 1 ˉ 2 2 ˉ ) semipolar plane through SAG. There, the (0001) facet plane was excluded; consequently, all the facet QWs showed short radiative recombination lifetimes, which are beneficial for future applications in visible-light communication. To further enhance the controllability of the emission spectra from 3D QWs or LEDs, convex-lens-shaped 3D structures have been proposed. The smooth surface of such structures is composed of unstable planes and has continuously varying crystal tilts. Because QW parameters are dependent on the crystal tilt, polychromatic emission is achieved. This method demonstrates greater flexibility of the structure design, which is expected to result in greater controllability of emission spectra.

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Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

Cited by 9 publications

References 48 publications

InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures

A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

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