InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Matsuda, Yoshinobu; Funato, Mitsuru; Kawakami, Yoichi

doi:10.35848/1882-0786/acb2af

Cited by 7 publications

(10 citation statements)

References 29 publications

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“…InGaN-based multiwavelength emitters using local offangle variations have been demonstrated [49][50][51][52][53][54]. One method to realize local off-angle variations is patterning of GaN (0001) with grayscale lithography and dry etching [49][50][51][52].…”

Section: A Novel Approach For Polychromatic Emission Without Using Sagmentioning

confidence: 99%

“…Very recently, we proposed convex-lens-shaped 3D GaN microstructures for underlying layers of InGaN QWs [53,54]. Figure 20(a) shows the fabrication procedure for such QWs, which are referred to as microlens QWs.…”

Section: A Novel Approach For Polychromatic Emission Without Using Sagmentioning

confidence: 99%

“…Representative planes include the (0001), {11 22}, and {1 101}. On the other hand, multiple research groups have reported that planes slightly tilted from the (0001) plane (⩽∼5 • ) reduce the In compositions in InGaN quantum well (QW) emitters [48][49][50][51][52][53][54]. This property has led to these materials being used in broadband superluminescent diodes [50,52] and polychromatic LEDs [51,54].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, multiple research groups have reported that planes slightly tilted from the (0001) plane (⩽∼5 • ) reduce the In compositions in InGaN quantum well (QW) emitters [48][49][50][51][52][53][54]. This property has led to these materials being used in broadband superluminescent diodes [50,52] and polychromatic LEDs [51,54]. Interestingly, these 3D structures are formed artificially and can be composed of arbitrary unstable planes, thereby enhancing the structural controllability and, eventually, the spectral controllability.…”

Section: Introductionmentioning

confidence: 99%

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A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

Funato,

Matsuda,

Kawakami

2023

Semicond. Sci. Technol.

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This paper reviews the development of three-dimensional (3D) structure-controlled InGaN quantum wells (QWs) for highly efficient multiwavelength emitters without using phosphors. Specifically, two representative structures are reviewed: 3D structures composed of stable planes with low surface energies and 3D structures composed of unstable planes. In the early stage of the research, 3D structures were grown on the (0001) polar plane through the selective area growth (SAG) technique based on metalorganic vapor phase epitaxy. Because GaN cannot grow on dielectric masks, different mask patterns were used to create various 3D facetted structures composed of stable facet planes. The InGaN QW parameters depend on the facet planes, which led to polychromatic emission, including white-light emission. After polychromatic light-emitting diodes (LEDs) on the (0001) polar plane were demonstrated, 3D QWs and LEDs were also demonstrated on the ( 1 ˉ 1 ˉ 2 2 ˉ ) semipolar plane through SAG. There, the (0001) facet plane was excluded; consequently, all the facet QWs showed short radiative recombination lifetimes, which are beneficial for future applications in visible-light communication. To further enhance the controllability of the emission spectra from 3D QWs or LEDs, convex-lens-shaped 3D structures have been proposed. The smooth surface of such structures is composed of unstable planes and has continuously varying crystal tilts. Because QW parameters are dependent on the crystal tilt, polychromatic emission is achieved. This method demonstrates greater flexibility of the structure design, which is expected to result in greater controllability of emission spectra.

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Section: A Novel Approach For Polychromatic Emission Without Using Sagmentioning

confidence: 99%

Section: A Novel Approach For Polychromatic Emission Without Using Sagmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

Funato,

Matsuda,

Kawakami

2023

Semicond. Sci. Technol.

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“…[11][12][13][14] Similarly, it has been reported that LEDs with different emission wavelengths can be formed simultaneously on the growth surface by applying the difference in In uptake efficiency due to the three-dimensional structure with different facets or off angles. [15][16][17][18][19][20] Although these technologies enable different wavelengths to be integrated on a wafer, they present challenges such as fine processing and growth technologies and design constraints for controlling wavelengths. The second approach is to stack layers emitting different wavelengths in the growth direction.…”

Section: Introductionmentioning

confidence: 99%

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

Okuno,

Goshonoo,

Ohya

2024

Jpn. J. Appl. Phys.

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InGaN-based monolithic full-color light-emitting diodes (LEDs), such as augmented reality and virtual reality, are candidates for displays with highly integrated pixels. We demonstrated a monolithic micro-LED display with green- and blue-emitting active layers separated by an n-type interlayer. The interlayer plays an important role in individually emitting green and blue light. The monolithic LED display was fabricated by mesa formation reaching the interlayer and the regrowth of the p-type layer, resulting in horizontally integrated green and blue LEDs. The display measuring 0.64 mm2 with 20 rows and 20 columns had 40 µm × 40 µm pixels comprising 20 µm × 40 µm sub-pixels with an emitting area of 8 µm × 23 μm and was driven by a passive matrix circuit. Images of the monolithic micro-LED display were successfully obtained by individually controlling the green- and blue-emitting micro-LEDs. These results will enhance the commercialization of micro-LED displays.

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An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth

Fukushige,

Matsuda,

Funato

et al. 2024

Physica Status Solidi (a)

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InGaN quantum wells (QWs) are grown at different temperatures on convex lens‐shaped GaN microstructures formed on the () plane. Microlens QWs grown at different temperatures have centrosymmetric convex lens shapes, and the wavelength spatial distributions within the structures exhibit similar tendencies. However, lowering the growth temperature broadens the wavelength range of room‐temperature cathodoluminescence spectra from the microlens QWs as ≈70 nm for ≈700 °C, ≈100 nm for ≈660 °C, and ≈150 nm for ≈650 °C. Peak wavelength profiles of the two orthogonal lines along [] and [] indicate that the broader emission bands are mainly due to the significant spatial distribution of the emission wavelength along the [] direction. Because the QW thickness variations are nearly the same along [] and [], the observed difference in the emission wavelength distributions along those directions is attributed to the difference in In incorporation, which is determined by the competition among the growth rate, crystal orientation, and growth temperature.

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InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Cited by 7 publications

References 29 publications

A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth

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