Above-IC generic poly-SiGe thin film wafer level packaging and MEM device technology: Application to accelerometers

Guo, Baofeng; Wen, Lianggong; Hélin, Philippe; Claes, Gert; Verbist, Agnes; Hoof, R. Van; Bois, Bert Du; Coster, J. De; Wolf, Ingrid De; Shahar, A.; Li, Y.; Cui, Hushan; Lux, Marcel; Vereecke, Guy; Tilmans, H.A.C.; Haspeslagh, L.; Decoutere, Stefaan; Osman, Haris; Puers, Robert; Severi, S.; Witvrouw, Ann

doi:10.1109/memsys.2011.5734434

Cited by 17 publications

(9 citation statements)

References 7 publications

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“…In [48,49] a poly-SiGe resonator, which could also be used as optical (heat) sensors, was presented. Recently, thin film packaging has been added into imec's poly-SiGe MEMS-last technology [50,51]. Outside of imec, also the University of California Berkley has worked on the development of SiGe structural layers for MEMS-above-CMOS applications, presenting micromachined poly-SiGe structures such as resonators [52] or a low frequency lateral comb drive [53].…”

Section: Sige Mems Demonstratorsmentioning

confidence: 99%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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Section: Sige Mems Demonstratorsmentioning

confidence: 99%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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“…Devices from the same design concept have been characterized with the vibration test setups [10]. As shown partially in figure 9, the testing system consists of three major building blocks: the mechanical vibration building block (including the TIRAvib tv52120 shaker, the function generator, the power amplifier and the dedicated device holder); the readout chip conditioning building block (including the MS3110 BDPC readout chip conditioning board, Tiepie HS3 Handyscope, multimeters and dc power supplies); and the signal acquisition building block (including the Brüel & Kjaer 4383S piezoelectric reference accelerometer, the related signal amplifier, the TiePie HS3 Handyscope and a laptop).…”

Section: Vibration Test Characterizationmentioning

confidence: 99%

An in-plane SiGe differential capacitive accelerometer for above-IC integration

Wen

Wouters

Haspeslagh

et al. 2011

J. Micromech. Microeng.

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MEMS above-IC monolithic integration can yield a very compact device with good cost-effectiveness. One of the major challenges for this technology is to protect the CMOS from the heat introduced by the MEMS fabrication. In this paper, we present the design and fabrication of a novel lateral capacitive accelerometer, utilizing a low thermal budget SiGe MEMS technology. The accelerometer features a 4 µm SiGe structural layer thickness with a shock protector gap of 500 nm. Benefiting from the low temperature (∼450 °C) SiGe MEMS technology, this inertial device demonstrates the achievability of fabricating above-IC mechanical sensors by 3D stacking. In this paper, the accelerometer design will be introduced first, followed by the introduction of the low thermal budget SiGe MEMS fabrication process. The fabricated devices have been characterized with a network/spectrum analyzer. Both a frequency sweep and a dc voltage sweep have been conducted. These electrostatic characterization results will be analyzed and compared with the design model.

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“…the THELMA platform of ST Microelectronics [2], the BOSCH platform [3], the Si above CMOS (complementary metal-oxide semiconductor) of TSMC (Taiwan Semiconductor Manufacturing Company) [4], and the Tronics platform [5]. In addition, various process platforms have been demonstrated in research organizations, such as the CMOS-MEMS (micro electro mechanical systems) platform [6,7], the M&NEMS (nano electro mechanical systems) 'generic' platform of Leti [8], and the SiGe MEMS platform of imec [9,10]. The processes for implementing MEMS devices by integrating CMOS and SOI (silicon on insulator) technologies have been investigated in [11,12], and a review of various approaches of heterogeneous integration of MEMS and IC has also been reported in [13].…”

Section: Introductionmentioning

confidence: 99%

Implementation of various vacuum conditions in sealed chambers for wafer-level bonding by using embedded cavity

Cheng

Liang

Chu

et al. 2016

J. Micromech. Microeng.

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The existing foundry processes enable the fabrication and integration of various sensors on a single chip. However, various vacuum conditions of these sensors remain a critical concern after packaging. For example, accelerometers and gyroscopes are operated under two different vacuum conditions. This study extends the concept of using outgassing to realize sealed chambers under different vacuum conditions in one wafer-level bonding step. In other words, by etching various numbers and sizes of cavities on a substrate, the vacuum condition of a sealed chamber can be modulated. In applications, resonators and Pirani gauges were fabricated and characterized to demonstrate the feasibility of the proposed process scheme. The vacuum condition of the sealed chambers was then monitored using the quality factor (detected by resonators) and the pressure (measured by Pirani gauges). The measurements indicate that the sealed chambers with vacuum conditions ranging from approximately 2 to 180 mbar were simultaneously fabricated and integrated on the same wafer. This approach could facilitate the monolithic integration of devices with different vacuum requirements, such as approximately 100 mbar chamber pressure for accelerometers, and single-digit millibars vacuum conditions for gyroscopes.

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Above-IC generic poly-SiGe thin film wafer level packaging and MEM device technology: Application to accelerometers

Cited by 17 publications

References 7 publications

Introduction

Introduction

An in-plane SiGe differential capacitive accelerometer for above-IC integration

Implementation of various vacuum conditions in sealed chambers for wafer-level bonding by using embedded cavity

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