Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

“…As the slurry consists of a mixture of abrasives and the solution, considering the amount of CO 2 generated during the production and disposal of particles, it is beneficial for the environment to use a slurry with a low abrasive concentration or an abrasive-free slurry even with the same amount of slurry used [70]. Additionally, considering that the amount of slurry used is proportional to the product of flow rate and polishing time, the total amount used can be reduced by completing the given CMP process within the minimum time at the optimum flow rate.…”

A New Chemical Mechanical Slurry for Polishing Yttrium Aluminium Garnet Material with Magnesium oxide, Sodium Metasilicate Pentahydrate and Zirconium Dioxide Abrasive Particles

“…The studies by Li et al [16] showed that the surface of Y3Al5O12 material was significantly improved when polishing by CMS containing a mixture of SiO2 and NaOH suspensions, but the removal capacity of the workpiece residue was low at 0.29 (nm/min). Besides, another factor affecting the use of colloidal silica is that the ability to remove the processing residue is reduced in the process of reusing colloidal silica to produce -Si-OH [17,18]. Several studies have been conducted to improve the performance of colloidal silica, however, the performance improvement is still limited [19].…”

Effect of Surfactant Based Abrasive Free Slurry on CMP Polishing Rate and Planarization of Semi-Polar (11‒22) GaN Surface

“…10,11 Such polishing related defects can be eliminated by abrasive free CMP which has many potential advantages in polishing various semiconductor surfaces for the opto-and micro-electronics devices. 10,12,13 This is primarily due to its ability to create low surface and subsurface defect density with atomically flat surface topography, decreased dishing and erosion, simple post cleaning, economically feasible and prolongation of the polishing pad lifetime. 7,[12][13][14] Therefore, it is essential to formulate polishing slurry without abrasive and study its subsequent surface modification of III-V nitride semiconductors and characterize the surface for its topography after the CMP process with a reasonable polishing rate.The ionic environment of the polishing slurry gets significantly altered in presence of any surfactant and hence affects its flow behavior and in turn the polishing rate and surface finish.…”

“…10,12,13 This is primarily due to its ability to create low surface and subsurface defect density with atomically flat surface topography, decreased dishing and erosion, simple post cleaning, economically feasible and prolongation of the polishing pad lifetime. 7,[12][13][14] Therefore, it is essential to formulate polishing slurry without abrasive and study its subsequent surface modification of III-V nitride semiconductors and characterize the surface for its topography after the CMP process with a reasonable polishing rate.The ionic environment of the polishing slurry gets significantly altered in presence of any surfactant and hence affects its flow behavior and in turn the polishing rate and surface finish. 15,16 It has been reported that surfactant in the polishing slurry act as a lubricating agent that reduces the friction coefficient leading to improved polishing rate and surface quality simultaneously unlike those obtained from slurry without any surfactant.…”

“…17 In this viewpoint, the role of surfactants on slurry stabilization and complex z E-mail: ddse@uohyd.ernet.in formation in presence and absence of abrasive particles and its subsequent effect on the polishing rate, selectivity and surface quality have been investigated rather often in Cu CMP. [10][11][12][18][19][20] For instance, Hong et al 19 and Bernard et al 20 reported that electrostatic attraction promotes strong adsorption of surfactant molecules on Cu surface and subsequent formation of a compact protective layer. This layer established a balanced mechanical force and chemical dissolution regardless of the presence and the absence of abrasive particles.…”