Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO 2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm radiation on films containing from n=1 to 20 graphene layers, as determined by atomic force microscopy. Both the 1 st and 2 nd order Raman spectra show unique signatures of the number of layers in the film. The nGL film analog of the Raman G-band in graphite exhibits a Lorentzian lineshape whose center frequency shifts linearly relative to graphite as ~1/n (for n=1 ω G~1 588 cm -1 ). Three weak bands, identified with disorder-induced 1 st order scattering, are observed at ~ 1350, 1450 and 1500 cm -1 . The 1500 cm -1 band is weak but relatively sharp and exhibits an interesting n-dependence. In general, the intensity of these D-bands decreases dramatically with increasing n. Three 2 nd order bands are also observed (~2450, ~2700 and 3248 cm -1 ). They are analogs to those observed in graphite. However, the ~2700 cm -1 band exhibits an interesting and dramatic change of shape with n. Interestingly, for n<5 this 2 nd order band is more intense than the G-band.