Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence

Hoshino, K.; Ocampo, J.M. Zanardi; Kamata, Norihiko; Yamada, Koji; Nishioka, M.; Arakawa, Yasuhiko

doi:10.1016/s1386-9477(99)00384-7

Cited by 6 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Combining with the previous result of efficiency improvement by modulation-doping [7], we studied F37 which has 20 periods of modulation-doped QW's in comparison with undoped equivalent F32.…”

Section: Improved Pl Properties By Modulation-dopingmentioning

confidence: 94%

“…Its band-edge PL intensity with and without the BGE, I AGE+BGE and I AGE , respectively, are measured to obtain the normalized PL intensity I AGE+BGE /I AGE . Its deviation from unity corresponds to the presence of the below-gap state whose energy is matched with that of the BGE [6][7][8][9][10][11]. Lowering the AGE power improves the sensitivity, so the scheme of single-photon-counting was used to detect the band-edge PL [5].…”

Section: Methodsmentioning

confidence: 99%

“…It allows us to choose a specific below-gap state by selecting the BGE energy and determine its density, carrier capture rates and spatial distribution quantitatively when proper BGE source is provided [6]. In continuation to our previous TWEPL characterization of a modulation-doped GaAs/AlGaAs QW [7], InGaN/GaN and GaN/AlGaN QW's [6,[8][9][10][11], we clarified an improved quality of plasma assisted (PA)-MBE grown GaN/AlGaN QW's [12][13][14] by increasing buffer-layer thickness and QW periods [15].…”

Section: Principles Of Two-wavelength Excited Photoluminescencementioning

confidence: 99%

See 2 more Smart Citations

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

Kamata

Klausing

Fedler

et al. 2004

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Abstract. In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's, we focused on several undoped and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's.PACS. 78.55.Cr III-V semiconductors -78.67.De Quantum wells -71.55.Eq III-V semiconductors

show abstract

Section: Improved Pl Properties By Modulation-dopingmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Section: Principles Of Two-wavelength Excited Photoluminescencementioning

confidence: 99%

See 1 more Smart Citation

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

Kamata

Klausing

Fedler

et al. 2004

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Within each gate pulse cycle, the system evolves from reset to inversion and back to reset. The repetition rate is therefore In fact, recently, there has been an experimental demonstration of the total absence of non-radiative recombination 22 in modulation doped GaAs heterojunctions. In addition, we anticipate that Auger recombination is also negligible, because of the relatively low free carrier concentration.…”

Section: Discussionmentioning

confidence: 99%

On-demand single-photon source using a nanoscale metal–insulator–semiconductor capacitor

Hu¹,

Yanɡ²,

Yang³

2005

Nanotechnology

View full text Add to dashboard Cite

We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under consideration is only nanometers in diameter. As in conventional metal-insulatorsemiconductor capacitors, our system can also be biased into the inversion regime.However, due to the small gate area, at the onset of inversion there are only a few electrons residing in a quantum dot. In addition, because of the strong size quantization and large Coulomb energy, the number of electrons can be precisely controlled by the gate voltage. After holding just one electron in the inversion layer, the capacitor is quickly biased back to the flat band condition, and the subsequent radiative recombination across the bandgap results in single photon emission. We present numerical simulation results of a semiconductor heterojunction and discuss the merits of this single photon source. 73.40.Qv, 73.23.Hk, 73.63.Kv, 03.67.Dd

show abstract

“…Therefore any increase or decrease of the PL intensity due to the addition of the BGE implies a sign of NRR centers which can be interpreted by either one level model or two levels model at their simplest form. Measurements of GaAs-based quantum wells (QWs) [11][12][13][14][15][16][17][18][19][20][21], GaN/InGaN-QWs [19][20][21][22][23], AlGaN-QWs for deep UV wavelength region [24][25], GaPN [26][27] and Ba 3 Si 6 O 12 N 2 : Eu 2+ phosphors [28] have been done by such straightforward experimental principle.…”

Section: Study By Below-gap Excitationmentioning

confidence: 99%

Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

Kamata

Islam

2015

Rajshahi Univ. j. sci. eng.

View full text Add to dashboard Cite

We have developed an optical method of detecting and characterizing nonradiative recombination (NRR) centers without electrical contact. The method combines a belowgap excitation (BGE) light with a conventional above-gap excitation light in photoluminescence (PL) measurement, and discriminates the PL intensity change due to switching on and off the BGE. A quantitative analysis of the detected NRR centers became possible by utilizing the saturating tendency of the PL intensity change with increasing the BGE density due to trap filling effect. Some experimental results of AlGaAs, InGaN, and AlGaN quantum wells were shown to allocate the development and present status as well as to exemplify their interpretations.Keywords: Internal quantum efficiency; photoluminescence; nonradiative recombination; below-gap excitation; defect states. INTRODUCTIONLight emitting diodes (LEDs) and laser diodes (LDs) in near infrared region realized fiber communication systems in 1970's [1] and provided an infrastructure of the world wide web of huge digital data link. The realization of blue and green LEDs through steady efforts on crystal growth technique of GaN [2-3] opened another revolution in lighting and display applications since three primary colors have been provided by efficient solid state light sources. Light-based science and technology are becoming more and more important for human society as vast information comes from our sense of sight.

show abstract

Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence

Cited by 6 publications

References 13 publications

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

On-demand single-photon source using a nanoscale metal–insulator–semiconductor capacitor

Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

Contact Info

Product

Resources

About