Micromirrors were fabricated by the micro-origami technique. This technique allows the fabrication of simple and robust hinges for movable parts, and it can be applied to any pair of lattice mismatched epitaxial layers, in semiconductors or metals. A multilayer structure, including AlGaAs/GaAs component layers and an InGaAs strained layer, was grown by molecular beam epitaxy on a GaAs substrate. After definition of the hinge and mirror’s shape by photolithography, the micromirrors were released from the substrate by selective etching. They moved to their final position powered by the strain release in the InGaAs layer. Optical actuation was achieved by irradiation with the 488 nm line of an argon laser, and the mirror’s position was measured by sensing the reflection of a He–Ne laser. Continuous wave irradiation with a power density of 450 mW/mm2 produced an angular deflection of the mirror of around 0.5°. The frequency response of the mirrors shows a resonance at 25 kHz.

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We study the performance of a lateral p–n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.