Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Hiller, Daniel; Zelenina, Anastasia; Gutsch, Sebastian; Dyakov, Sergey A.; López‐Conesa, Lluís; López-Vidrier, J.; Estradé, S.; Peiró, Francesca; Garrido, B.; Valenta, J.; Kořínek, M.; Trojánek, F.; Malý, P.; Schnabel, Manuel; Weiss, Charlotte; Janz, S.; Zacharias, Margit

doi:10.1063/1.4878699

Cited by 46 publications

(23 citation statements)

References 67 publications

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“…40 Please note that a detailed analysis of photoluminescence origin is under way and will be given soon. 41 In conclusion, at least for the samples presented here the variation of the PL emission energy which seems to have "Si NC size dependence" is obviously an artifact and cannot be related to the quantum confinement model. Thus, in general the presence of quantum confinement effect for silicon nanocrystals in Si 3 N 4 matrix becomes much less obvious then it was considered before.…”

Section: Photoluminescence Of Si Ncs In Si 3 Nmentioning

confidence: 67%

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Zelenina¹,

Dyakov²,

Hiller³

et al. 2013

Journal of Applied Physics

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Superlattices of Si3N4 and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiNx layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si3N4 matrix remains amorphous even after annealing at 1200 degrees C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO2 matrix. Also, a systematic peak shift was not found. The SiNx/Si3N4 superlattices showed photoluminescence peak positions in the range of 540-660nm (2.3-1.9 eV), thus quite similar to the bulk Si3N4 film having peak position at 577nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si3N4 are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si3N4 surrounding matrix luminescence

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Section: Photoluminescence Of Si Ncs In Si 3 Nmentioning

confidence: 67%

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Zelenina¹,

Dyakov²,

Hiller³

et al. 2013

Journal of Applied Physics

Self Cite

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“…Among these, Si nanostructures or Si quantum dots (QDs) are one of the best candidates due to their peculiar properties such as quantum confinement effects (QCE) and multiple excitons generation (MEG) [4][5]. Until now, Si QDs dispersed in oxide and nitride matrix have been drastically investigated [6][7][8][9][10][11][12][13][14][15][16][17]. Similar embedded structure has also been reported for other semiconductor QDs [18][19].…”

Section: A N U S C R I P Tmentioning

confidence: 93%

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Liao

Zeng

Wen

et al. 2015

Vacuum

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“…The PL spectra of films can be used to obtain mid‐gap state information . The PL generated by mid‐gap‐involved recombination had a longer wavelength than that emitted by an ideal conduction band edge–valence band edge recombination.…”

Section: Resultsmentioning

confidence: 91%

Defect Restoration of Low‐Temperature Sol‐Gel‐Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes

Kim

Sim

Yoon

et al. 2018

Adv Funct Materials

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This study shows that the deep-level defect states in sol-gel-derived ZnO can be efficiently restored by facile sulfur doping chemistry, wherein the +2 charged oxygen vacancies are filled with the S 2− ions brought by thiocyanate. By fabricating a solution-processed polymeric Schottky diode with ITO/ZnO as the cathode, the synergetic effects of such defect-restored ZnO electron selective layers are demonstrated. The decreased chemical defects and thus reduced mid-gap states enable to not only enlarge the effective built-in potential, which can expand the width of the depletion region, but also increase the Schottky energy barrier, which can reduce undesired dark-current injection. As a result, the demonstrated simple-structure blue-selective polymeric Schottky photodiode renders near-ideal diode operation with an ideality factor of 1.18, a noise equivalent power of 1.25 × 10 −14 W Hz −1/2 , and a high peak detectivity of 2.4 × 10 13 Jones. In addition, the chemical robustness of sulfur-doped ZnO enables exceptional device stability against air exposure as well as device-to-device reproducibility. Therefore, this work opens the possibility of utilizing low-temperature sol-gel-derived ZnO in realizing highperformance, stable, and reliable organic photodiodes that could be employed in the design of practical image sensors.

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Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Cited by 46 publications

References 67 publications

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Defect Restoration of Low‐Temperature Sol‐Gel‐Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes

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