Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures

Toropov, N. A.; Gladskikh, I. A.; Gladskikh, Polina V.; Kosarev, A.; Preobrazhenskii, V. V.; Putyato, М. А.; Semyagin, B. R.; Chaldyshev, V. V.; Vartanyan, T. A.

doi:10.1364/jot.84.000459

Cited by 12 publications

(11 citation statements)

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“…Unfortunately, such integration is impossible for the common plasmonic materials—gold and silver, since the fabrication technology of the Au and Ag nanoparticles is not compatible with the epitaxial growth technology of III–V semiconductor compounds widely used for optoelectronics. In this case, the system of plasmonic nanoparticles can only be produced on the surface of the semiconductor nanostructure by post-growth deposition and treatments [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

et al. 2022

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AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fröhlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fröhlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors.

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Section: Introductionmentioning

confidence: 99%

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

et al. 2022

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“…It was shown that UV radiation causes in these nanoporous samples a luminiscence in a visible part of the spectrum (450 − 620 nm) [61]. The different maxima in the luminiscence spectra is due by the the presence of different size silver-containing aggregates [62].…”

Section: Porous Glassesmentioning

confidence: 94%

Nanoparticle formation in nanoporous structures and applications

et al. 2020

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Firmato digitalme nte da VANELLA ANDREA C=IT I wish to thank Prof. Emilio Mariotti for his help and support during my work days. I would like to thank also Prof.ssa Carmela Marinelli for her valuable advices.Special thanks go to the researchers of the PhysNano laboratory at the Saint Petersburg National Research University of Information technologies, Mechanics and Optics (ITMO) for the preparation of the alumina samples analyzed in this work.I also want to thank Leonardo Stiaccini for the constant and precious technical help and assistance.Finally, I have to thank Nicole for always being there.vii

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“…The first step is the physical vapor deposition of the carefully chosen amount of silver on the substrate kept at the room temperature. The obtained metal film has a semi-continuous labyrinth structure with very broad and shifted in the IR plasmon band 48 . The second step consists in thermal annealing that activates surface diffusion and finally leads to dewetting and formation of a 2D array of well separated nanoparticles.…”

Section: Methodsmentioning

confidence: 99%

“… 44 and in the case of GaAs substrate in 41 . Based on the vast experience in silver nanoparticles fabrication and investigation of their plasmonic properties 41 – 44 , 48 we chose the particular set of control parameters that led to the successful approximation of the optimal film morphology suggested by the numerical simulations. The equivalent thickness of the silver film as measured in situ by the quartz crystal microbalance was equivalent to 20 nm, while the deposition rate was set to 2 nm/min.…”

Section: Methodsmentioning

confidence: 99%

Boosting Terahertz Photoconductive Antenna Performance with Optimised Plasmonic Nanostructures

Lepeshov

Gorodetsky

Krasnok

et al. 2018

Sci Rep

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Advanced nanophotonics penetrates into other areas of science and technology, ranging from applied physics to biology, which results in many fascinating cross-disciplinary applications. It has been recently demonstrated that suitably engineered light-matter interactions at the nanoscale can overcome the limitations of today’s terahertz (THz) photoconductive antennas, making them one step closer to many practical implications. Here, we push forward this concept by comprehensive numerical optimization and experimental investigation of a log-periodic THz photoconductive antenna coupled to a silver nanoantenna array. We shed light on the operation principles of the resulting hybrid THz antenna, providing an approach to boost its performance. By tailoring the size of silver nanoantennas and their arrangement, we obtain an enhancement of optical-to-THz conversion efficiency 2-fold larger compared with previously reported results for similar structures, and the strongest enhancement is around 1 THz, a frequency range barely achievable by other compact THz sources. We also propose a cost-effective fabrication procedure to realize such hybrid THz antennas with optimized plasmonic nanostructures via thermal dewetting process, which does not require any post processing and makes the proposed solution very attractive for applications.

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Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures

Cited by 12 publications

References 0 publications

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

Nanoparticle formation in nanoporous structures and applications

Boosting Terahertz Photoconductive Antenna Performance with Optimised Plasmonic Nanostructures

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