Absorption Edge of MnGa2Se4 Single Crystals under Hydrostatic Pressure

González, J.; Rico, R.; Calderón, E.; Quintero, M.; Morocoima, M.

doi:10.1002/(sici)1521-3951(199901)211:1<45::aid-pssb45>3.0.co;2-8

Cited by 16 publications

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“…In the last few years, the emphasis in the study of these compounds has been on their structural [1], magnetic [2], and optical proper ties [3][4][5][6]. Figure 1 presents the current-voltage (I-V) char acteristics of the MnGa 2 Se 4 single crystals.…”

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Current-voltage characteristics of MnGa2Se4 single crystals

Тагиев

Asadullayeva

et al. 2012

Semiconductors

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field controlled lasers, light modulators, electric and optical memory elements, and other func tional optoelectronic devices. In the last few years, the emphasis in the study of these compounds has been on their structural [1], magnetic [2], and optical proper ties [3][4][5][6]. Figure 1 presents the current-voltage (I-V) char acteristics of the MnGa 2 Se 4 single crystals. The fol lowing portions are clearly distinguished:(i) sharp growth of current with voltage;(ii) sublinear dependence of current on voltage;(iii) quadratic dependence of current on voltage; and (iv) sharp growth of current with voltage. The observed feature of the I-V characteristics of the single crystal MnGa 2 Se 4 samples is typical of many high resistivity semiconductors and structures on their basis [7][8][9][10][11][12]. In the analysis of the I-V char acteristics of the single crystal MnGa 2 Se 4 samples (In-MnGa 2 Se 4 -In structures) measured in a wide electric field range, we took into account the presence of different portions clearly distinguished in the dependence of exponent α on the electric voltage applied to the structure when describing the I-V char acteristics in the form I ∝ V α .Using the I-V characteristics presented in Fig. 1, we determined the dependences α(V) for the MnGa 2 Se 4 single crystals; the results are shown in Fig. 2. It can be seen that at low voltages, α sharply decreases, passes through its minimum, and, with a further increase in voltage, attains its maximum value. We denote the minimum and maximum values of the differential power as α m and α M , respectively, and the corresponding currents and voltages as I m , V m and I M , V M . According to the data presented in Fig. 2, for the sample with the thickness L = 7 × 10 -3 cm and the contact area S = 4 × 10 -2 cm 2 , we determined the fol lowing extreme values at 300 K: α m = 0.6, I m = 10 -13 A, V m = 10.1 V, α M = 6.5, I M = 8 × 10 -12 A, and V M = 365 V.Similar results were obtained for other samples at different temperatures. Knowing the values of α m , I m , Abstract-The current-voltage characteristics of single crystal MnGa 2 Se 4 samples have been studied. The measurements have been performed in the electric field range from the range of validity of Ohm's law to 10 V/cm at temperatures of 300-400 K. The data obtained are discussed within the context of the theory of injection contact phenomena and field ionization of traps due to the Poole Frenkel effect.

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Current-voltage characteristics of MnGa2Se4 single crystals

Тагиев

Asadullayeva

et al. 2012

Semiconductors

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“…However, since the band spectrum was not calculated, we made only qualitative conclusions about the character of optical transitions. Later, we studied also the fundamental absorption edge of MnGa 2 Se 4 at pressures up to 20 GPa [5]. At 14 GPa, a phase transition to the NaCl type structure is observed.…”

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“…At 14 GPa, a phase transition to the NaCl type structure is observed. The authors [5] claim that the fundamental absorption edge of MnGa 2 Se 4 is formed by direct opti cal transitions. A value of 2.7 eV for the optical band gap was reported.…”

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Optical transitions in MnGa2Se4

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“…During the last few years many studies have been devoted to the structural [1], magnetic [2,3], and optical [4][5][6] properties of these crystals. Figure 1 shows the current-voltage (I-V) charac teristics of MnGa 2 Se 4 single crystals.…”

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Current-voltage characteristics of MnGa2Se4 single crystals

et al. 2012

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319Ternary compounds with the general formula are promising for the development of mag netic field controlled lasers, light modulators, ele ments of electric and optical memory, and other opto electronic devices. During the last few years many studies have been devoted to the structural [1], magnetic [2,3], and optical [4][5][6] properties of these crystals. Figure 1 shows the current-voltage (I-V) charac teristics of MnGa 2 Se 4 single crystals. One can clearly see the following stages: (i) a sharp increase in current with an increase in voltage; (ii) sublinear dependence of the current on voltage, (iii) quadratic dependence of the current on voltage, and (iv) a feature that is char acteristic of many high resistivity semiconductors and structures based on them [7][8][9][10][11][12]. When analyzing the I-V characteristics of MnGa 2 Se 4 single crystals mea sured in a wide range of electric fields, the validity of the following conditions was taken into account.Different stages of the I-V characteristics of In-MnGa 2 Se 4 -In structures can clearly be seen in the dependence of the differential exponent α of the I-V characteristic on the applied voltage (I ∝ V α ). Figure 2 shows the dependences α(V) for MnGa 2 Se 4 single crystals, which were determined from the I-V characteristics shown in Fig. 1. It can be seen that α sharply decreases at low voltages, passes through a minimum, and then increases with an increase in voltage to reach a maximum. We will denote the minimum (maximum) differential expo nents as α m (α M ) and the corresponding currents and voltages as I m (I M ) and V m (V M ), respectively. Accord ing to the data in Fig. 2, the extreme values of α, I, and V for the sample with the thickness L = 7 × 10 -3 cm A II B 2 III C 4 VI and the contact area S = 4 × 10 -2 cm 2 at 300 K are as follows:Abstract-The current-voltage characteristics of MnGa 2 Se 4 single crystals have been investigated. The mea surements were performed in the range of electric fields from the level at which the Ohm law is satisfied to 10 V/cm, and in the temperature range 300-400 K. The data obtained are interpreted within the theory of injection-contact phenomena and the theory of field ionization of traps due to the Poole-Frenkel effect.

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Absorption Edge of MnGa2Se4 Single Crystals under Hydrostatic Pressure

Cited by 16 publications

References 7 publications

Current-voltage characteristics of MnGa2Se4 single crystals

Current-voltage characteristics of MnGa2Se4 single crystals

Optical transitions in MnGa2Se4

Current-voltage characteristics of MnGa2Se4 single crystals

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