Absorption spectra of impurities in silicon—I

Burstein, E.; Picus, G. S.; Henvis, B. W.; Wallis, R. F.

doi:10.1016/0022-3697(56)90012-9

Cited by 107 publications

(9 citation statements)

References 19 publications

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“…The energy levels in Fig. 3 have been plotted by assuming a n ionization energy of 46 mev (Burstein et al 1956;Kohn 1957). T h e present author believes that an ionization energy of possibly as low as 44 mev cannot be ruled out by the present esperililental data.…”

Section: Expeririiental Procedures and Resultsmentioning

confidence: 99%

Infrared Absorption Lines in Boron-Doped Silicon

Colbow¹

1963

Can. J. Phys.

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In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground state to excited states. This leads to a line spectrum. Because of a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave a misleading picture of the low-temperature half-width, the temperature dependence of this half-width, and the onset of concentration broadening at low temperatures.New experimental data are presented and explained by introducing the mechanism of statistical Stark broadening due to ionized impurities, and by modifying Baltensperger's (1953) theory for concentration broadening. At low impurity concentration the width is attributed to phonon broadening (Barrie and Nishikawa 1963) and internal strains (Kohn 1957).

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Section: Expeririiental Procedures and Resultsmentioning

confidence: 99%

Infrared Absorption Lines in Boron-Doped Silicon

Colbow¹

1963

Can. J. Phys.

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“…e.g. Burstein et al[9]). According to the interpretation given there it is reasonable to explain the broad peaks by excitations into the conduction band, the sharper peaks a t lower energies by transitions into excited levels.…”

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confidence: 99%

Optical and Photoelectrical Properties of β‐Rhombohedral Boron II. Photoeffects

Werheit

1970

Physica Status Solidi (b)

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P-rhombohedra1 boron is characterized as infrared phosphor. Below 100 C the optical absorption in the region between absorption edge and lattice vibrations as well as the electrical conductivity show a considerable rise during illumination with white light caused by two trapping levels of great density of states. At low temperatures both levels cannot be occupied simultaneously. Optical ionization spectra of charged traps ("photoabsorption") give high activation energies confirmed b y glow curves derived from the temperature dependence of photoabsorption. The recombination of trapped electrons and free holes does not take place directly but via the conduction band. Therefore it is considerably delayed especially a t low temperatures because of the high ionization energies of the traps. P-rhomboedrisches Bor wird als infraroter Phosphor charakterisiert. Seine optische Absorption im Bereich zwischen Absorptionskante und Gitterschwingungen somie die elektrische Leitfahigkeit zeigen unter 100 "C bei und nach Beleuchtung niit weil3em Licht eine betrachtliche Erhohung, die durch zwei Haftniveaus hoher Zustandsdichte bedingt ist. Bei tiefen Temperaturen konnen beide Niveaus nicht gleichzeitig besetzt werden. Optische Ionisationsspektren der geladenen Haftstellen (,,Photoabsorption") geben hohe Ionisierungsenergien, die mit den Aktivierungsenergien des Temperaturgangs der Photoabsorption vertriiglich sind. Die Rekombination eingefangener Elektronen mit freien Lochern erfolgt iiber das Leitungsband und wird wegen der hohen Ionisationsenergie der Haftstellen insbesondere bei tiefen Temperaturen extrem verzogert.

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“…[3], but was scarcely observed in optical absorption measurement. However, the presence of defect related absorption in wide-gap p-type materials such as Cd, -,Mn,Te [4], Si [5], GaAs [6], GaSb [7] is significant.…”

Section: Introductionmentioning

confidence: 99%

Defect related absorption in p-type Hg1−xCdxTe Alloys

Huang

Tang

1990

phys. stat. sol. (a)

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Infrared absorption in undoped p‐type Hg1−xCdxTe and Cd1−xMnxTe alloys is measured in the temperature range of 77 to 300 K. Defect related absorption is observed in both, Hg1−xCdxTe (x > 0.3) and Cd0.9Mn0.1Te alloys at low temperature. Annealing and Sb doping are used to identify the absorption mechanism. The defect related absorption is attributed to the transition from the valence band to an acceptor level. A quantum defect model is used to fit the absorption spectra and to obtain the ionization energy of the defect. The level between 15 meV and 0.4 Eg is observed in undoped p‐type Hg1−xCdxTe alloys.

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Absorption spectra of impurities in silicon—I

Cited by 107 publications

References 19 publications

Infrared Absorption Lines in Boron-Doped Silicon

Infrared Absorption Lines in Boron-Doped Silicon

Optical and Photoelectrical Properties of β‐Rhombohedral Boron II. Photoeffects

Defect related absorption in p-type Hg1−xCdxTe Alloys

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