AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial layer formation

“…As the frequency of the AC bias was increased, C / C 1k ( C 1k denotes the capacitance at an AC frequency of 1 kHz) decreased in the MIM capacitors owing to defects in the bulk region of the insulator. 20,21 As the frequency increased, the contribution of defects, V O in this case, to the capacitance decreased, thereby resulting in a relatively high decrease in C / C 1k depending on the frequency. In the C / C 1k vs. frequency ( C / C 1k –freq.)…”

Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier

“…Charged particles in the dielectric film, such as electrons trapped in trap sites or charged defects, would respond to the electric field induced by an AC voltage. Therefore, unlike general C – V measurements (small AC levels), defects in the dielectric bulk area can be detected when a pure AC voltage is applied. ,,, Figure shows the AC nonlinear characteristics of the ZrO 2 -based MIM capacitors, depending on the insertion layer. The relative capacitance density ( C / C 0 , where C 0 denotes the capacitance density at the AC level of 0.05 V) can be considered to be a qualitative defect density that induces charging and discharging at the defects corresponding to the applied AC level.…”