The electrical conduction mechanisms of semicrystalline thermoplastic parylene C (-H(2)C-C(6)H(3)Cl-CH(2)-)(n) thin films were studied in large temperature and frequency regions. The alternative current (AC) electrical conduction in parylene C is governed by two processes which can be ascribed to a hopping transport mechanism: correlated barrier hopping (CBH) model at low [77-155 K] and high [473-533 K] temperature and the small polaron tunneling mechanism (SPTM) from 193 to 413 K within the framework of the universal law of dielectric response. The conduction mechanism is explained with the help of Elliot's theory, and the Elliot's parameters are determined. From frequency- and temperature-conductivity characteristics, the activation energy is found to be 1.27 eV for direct current (DC) conduction interpreted in terms of ionic conduction mechanism. The power law dependence of AC conductivity is interpreted in terms of electron hopping with a density N(E(F)) (~10(18) eV cm(-3)) over a 0.023-0.03 eV high barrier across a distance of 1.46-1.54 Å.

α , β, and γ relaxation mechanisms have been identified in semicrystalline (45% of crystallinity) parylene-C (–H2C–C6H3Cl–CH2–)n films. C–Cl bonds induce the β-relaxation and explain increase in the dielectric constant as the frequency decreases in usual temperatures of operation for devices incorporating parylene-C. At cryogenic temperature (<−20 °C), γ-relaxation is assigned to the local motions of phenyl groups. Both β and γ relaxation processes obey an Arrhenius law with activation energy Ea(β)=91.7 kJ/mole and Ea(γ)=8.68 kJ/mole. α-relaxation associated with cooperative segmental motions of the (–H2C–∅–CH2–)n chains is observed with a peak at 10−2 Hz for T=80 °C and follows a Vogel–Fulcher–Tamman–Hesse law.

Resistance switching is studied in HfO2 as a function of the anode metal (Au, Cu, and Ag) in view of its application to resistive memories (resistive random access memories, RRAM). Current-voltage (I-V) and current-time (I-t) characteristics are presented. For Au anodes, resistance transition is controlled by oxygen vacancies (oxygen-based resistive random access memory, OxRRAM). For Ag anodes, resistance switching is governed by cation injection (Conducting Bridge random access memory, CBRAM). Cu anodes lead to an intermediate case. I-t experiments are shown to be a valuable tool to distinguish between OxRRAM and CBRAM behaviors. A model is proposed to explain the high-to-low resistance transition in CBRAMs. The model is based on the theory of low-temperature oxidation of metals (Cabrera-Mott theory). Upon electron injection, oxygen vacancies and oxygen ions are generated in the oxide. Oxygen ions are drifted to the anode, and an interfacial oxide is formed at the HfO2/anode interface. If oxygen ion mobility is low in the interfacial oxide, a negative space charge builds-up at the HfO2/oxide interface. This negative space charge is the source of a strong electric field across the interfacial oxide thickness, which pulls out cations from the anode (CBRAM case). Inversely, if oxygen ions migration through the interfacial oxide is important (or if the anode does not oxidize such as Au), bulk oxygen vacancies govern resistance transition (OxRRAM case).

Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range

Micro-structured cellular polydimethylsiloxane (PDMS) materials were prepared by a low-cost molding process allowing us to control geometry and sample size. Cellular structures are charged with a triangular quasi-static voltage with amplitudes between 1 kV and 4 kV and a frequency of 0.5 Hz fixed after having evaluated the conditions enhancing the piezoelectric response of the cellular PDMS. The piezo-electret PDMS material charged at room temperature has a piezoelectric coefficient d 33 of 350 pC/N, which is ten times larger than that of polyvinylidene fluoride. The high piezoelectric coefficient with a very low elastic modulus of 300 kPa makes these materials very useful for wearable device applications. The piezoelectric coefficient d 33 of the samples poled at high temperatures improves thermal stability but reduces PDMS piezoelectret piezoelectricity, which is explained by the structure's stiffness. These results are useful and allow us to set the conditions for the preparation of the piezo-electret materials according to desired applications.