We have studied the photo current generation, conduction mechanism and photocatalytic activity in reduced graphene oxidezinc telluride (RGO-ZnTe) composite synthesized by simple low-cost one pot single step solvothermal reaction. The photo responsivity of the RGO-ZnTe composite thin film photodetector shows 3 orders of magnitude higher compared to controlled-ZnTe under simulated solar light illumination. A linear variation of photosensitivity with the incident illumination intensity was observed. The electrical conduction measurement of the composite in the frequency range from 20 Hz to 2 MHz was carried out in the temperature range of 298 À 393 K.The direct current (DC) conductivity of the RGO-ZnTe composite follows Arrhenius relationship. The scaling of conductivity spectra shows the temperature-independent nature of the conduction mechanism in the RGO-ZnTe composite. As prepared RGO-ZnTe composites exhibit excellent photocatalytic efficiency toward the degradation of Rhodamine B (Rh B) under simulated solar light irradiation in compared to the controlled-ZnTe. The synergy of ZnTe and RGO in achieving improved photocatalytic Rh B degradation has also been studied.
IntroduvtionNowadays reduced graphene oxide (RGO) has drawn tremendous attention for the fabrication of large scale thin film device at low-cost, owing to its ease of material processing and mechanical flexibility. [1][2] Low temperature thin film deposition on various comfortable substrates makes RGO an ideal material for large area devising. The surface defects, wide range of oxygen functionalities at the edges of RGO sheet make it as an ideal canvas for anchoring a wide range of materials like; metal, metal oxide, semiconductor, polymer etc. Nanomaterials. [3][4][5][6] In addition, RGO-based composites are considered to be promising candidates in the field of environmental applications such as energy storage and photocatalyic degradation of organic pollutants. [7][8][9][10][11][12] When an optical material is illuminated, the excitons are generated, which dissociates into free carriers. The key bottleneck is the transport of photo-induced charges across the optical materials network, which contends with the charge recombination. The recombination process reduces the power conversion efficiency and demonstrates poor photocatalytic performance under visible-light irradiation. Nowadays hybrid materials are synthesized to restrain the recombination and improve the efficiency of the optical materials. So far, semiconducting oxide nanomaterials such as ZnO, TiO 2 were used as RGO-based optoelectronic devising under ultra violet (UV) or visible (Vis) light irradiation. But the performance of oxide semiconductors is strongly restricted by the oxygen vacancies present at the surface. As a result a slow time response with photocurrent instability is observed. [13] To this end, Zinc telluride (ZnTe), a direct band zinc-blende structured semiconductor of band gap about 2.25 eV at room temperature is one of the most important materials in optoelectronic industr...