5th IET International Conference on Power Electronics, Machines and Drives (PEMD 2010) 2010
DOI: 10.1049/cp.2010.0123
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Accelerated testing of IGBT power modules to determine time to failure

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Cited by 12 publications
(6 citation statements)
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“…It is thus necessary to employ a number of different techniques to accelerate failure mechanisms. These techniques, known as accelerated aging tests, are divided into three main categories: thermal cycling [11], [28]- [30], power cycling [31], [32], and electrical overstress [33]. It is noteworthy that due to the nature of failures, different failures are induced under different aging experiments.…”
Section: Aging Experimentsmentioning
confidence: 99%
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“…It is thus necessary to employ a number of different techniques to accelerate failure mechanisms. These techniques, known as accelerated aging tests, are divided into three main categories: thermal cycling [11], [28]- [30], power cycling [31], [32], and electrical overstress [33]. It is noteworthy that due to the nature of failures, different failures are induced under different aging experiments.…”
Section: Aging Experimentsmentioning
confidence: 99%
“…The second method is the analytical lifetime prediction based on Coffin-Manson models, Norris-Landzberg models, or Bayerer's models [10]. The lifetime expectancy (in numbers of cycles) of an IGBT is experimentally obtained from the given environmental and load conditions [11]. The cumulative fatigue (or damage) of an IGBT is calculated based on actual operational conditions and its RUL which is then expressed as the number of cycles to failures.…”
mentioning
confidence: 99%
“…High power IGBT modules have a relatively long life time under normal use conditions therefore ALT is used for lifetime model parameterization [27]. ALT can be understood as a test method which makes a device fail faster than it would fail under normal use level conditions [28].…”
Section: N 2 E a δT J T M F (4) Bayerer K β 1 β 2 β 3 mentioning
confidence: 99%
“…Due to the thermal capacitances of the different materials the temperatures do not reach critical values. On the other hand the life time of semiconductors is reduced because of the temperature ripple [14]. The FIT curve (Failure in Time) describes this dependency between temperature difference and number of pulse repetitions.…”
Section: Average Output Current I Avg [A]mentioning
confidence: 99%