Accelerating the transient simulation of semiconductor devices using filter-bank transforms

Movahhedi, Masoud; Abdipour, Abdolali; Dehghan, Mehdi

doi:10.1002/jnm.598

Cited by 10 publications

(11 citation statements)

References 18 publications

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“…4. Thus, the unit-per-length noise correlation matrix for chain representation of the transistor (CA UPL ) can be deduced as [16][17][18] …”

Section: Noise Modeling Of High-frequency Fetsmentioning

confidence: 99%

Efficient Time-Domain Noise Modeling Approach for Millimeter-Wave Fets

Asadi¹,

Yagoub²

2010

PIER

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Abstract-Based on the active coupled line concept, a novel approach for efficient noise performance modeling of millimeter-wave field-effect transistors is proposed. This distributed model considers the effect of wave propagation along the device electrodes, which can significantly affect the noise performance especially in the millimeter-wave range. By solving the multi-conductor transmission line equations, using the Finite-Difference Time-Domain technique, this procedure can accurately determine the noise correlation matrix of the transistor and then its noise performance.

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“…4. Thus, the unit-per-length noise correlation matrix for chain representation of the transistor (CA UPL ) can be deduced as [16][17][18] …”

Section: Noise Modeling Of High-frequency Fetsmentioning

confidence: 99%

Efficient Time-Domain Noise Modeling Approach for Millimeter-Wave Fets

Asadi¹,

Yagoub²

2010

PIER

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“…In the following, we use the tensor product filter-bank transform, which is called the 2-D transform, for preconditioning. Also, we use Daubechies wavelets for wavelet transforms and and filter-banks for filter-bank transforms [24]. Fig.…”

Section: Construction Of the Preconditionermentioning

confidence: 99%

“…Here, we consider one of the existing implicit schemes for semiconductor equations. In this scheme, Poisson's equation is considered as follows and called the modified Poisson's equation [22].…”

Section: B Modified Poisson's Equationmentioning

confidence: 99%

“…The idea is that the parts of the transformed operator will be diagonally dominant, whereas the is not, but this part is very small and can be directly inverted [21]. The filter-bank transform of matrix is defined as (17) where matrix performs steps in the filter-bank transform (see [24] for notation and details). In general, the matrix representation of the transformed operator is shown in Fig.…”

Section: Construction Of the Preconditionermentioning

confidence: 99%

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Efficient numerical methods for simulation of high-frequency active devices

Movahhedi

Abdipour

2006

IEEE Trans. Microwave Theory Techn.

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Abstract-We present two new numerical approaches for physical modeling of high-frequency semiconductor devices using filterbank transforms and the alternating-direction implicit finite-difference time-domain method. In the first proposed approach, a preconditioner based on the filter-bank and wavelet transforms is used to facilitate the iterative solution of Poisson's equation and the other semiconductor equations discretized using implicit schemes. The second approach solves Maxwell's equations which, in conjunction with the semiconductor equations, describe the complete behavior of high-frequency active devices, with larger time-step size. These approaches lead to the significant reduction of the fullwave simulation time. For the first time, we can reach over 95% reduction in the simulation time by using these two techniques while maintaining the same degree of accuracy achieved using the conventional approach.Index Terms-Alternating-direction implicit finite-difference time-domain (ADI-FDTD) method, filter-bank transforms, full-wave analysis, global modeling, high-frequency devices, preconditioning.

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“…Although, some efficient numerical methods have been recently proposed for simulation time reduction [5][6][7][8][9], but it sounds that this analysis approach needs more attention for implementing in simulation software. On the other hand, device behavior in high frequencies can be well described using semi-distributed model which can be easily implemented in CAD routines of simulators [9][10][11][12]. But the semi-distributed model cannot consider wave propagation effect and phase cancellation on the electrical performance of the device [2].…”

Section: Introductionmentioning

confidence: 99%

Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

Afrooz¹,

Abdipour²,

Tavakoli³

et al. 2007

PIER

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Abstract-In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is applied to a GaAs MESFETs by solving the AMTL equations using Finite-Difference Time-Domain (FDTD) technique. The scattering parameters are computed from time domain results over a frequency range of 20-220 GHz. This model investigates the effect of wave propagation along the transistor more accurate than the slice model, especially at high frequencies.

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Accelerating the transient simulation of semiconductor devices using filter-bank transforms

Cited by 10 publications

References 18 publications

Efficient Time-Domain Noise Modeling Approach for Millimeter-Wave Fets

Efficient Time-Domain Noise Modeling Approach for Millimeter-Wave Fets

Efficient numerical methods for simulation of high-frequency active devices

Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

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