1994
DOI: 10.1103/physrevb.50.17618
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Acceptor level of substitutional Ni in diamond

Abstract: Substitutional Ni in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni EPR signal can be diminished by optical illumination, and the threshold energy of 2.47 + 0.02 ev suggests that the acceptor level is located at 3.03 eV above the valence band. The energy dependence of the optical cross section for the electron ionization a. "was determined from an analysis of the EPR transients.

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Cited by 18 publications
(10 citation statements)
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“…Additionally, the calculated acceptor transition energy ð0=ÀÞ of the Ni s is e v þ 3:0 eV; where e v defines the valence band top. This value is in excellent agreement with the experimental data of e v þ 3:0 eV [15,16]. This confirms the proposed microscopic model as a ðNi À s Þ to explain the experimental data of the W8 center [1].…”
Section: Interpretation Of Experimental Datasupporting
confidence: 90%
“…Additionally, the calculated acceptor transition energy ð0=ÀÞ of the Ni s is e v þ 3:0 eV; where e v defines the valence band top. This value is in excellent agreement with the experimental data of e v þ 3:0 eV [15,16]. This confirms the proposed microscopic model as a ðNi À s Þ to explain the experimental data of the W8 center [1].…”
Section: Interpretation Of Experimental Datasupporting
confidence: 90%
“…Using the total energies of the centers in positive and negative charge states, we computed the transition energies. The acceptor transition energy (-/0) of the Ni s is ε v + 2.9 eV, which is in excellent agreement with the experimental data of ε v + 3.0 eV [16,17]. The donor transition energy (0/+) of the Ni i is computed to be ε v + 0.5 eV.…”
Section: Formation and Transition Energiessupporting
confidence: 76%
“…In photo-EPR measurements, EPR spectra under illumination are recorded as a function of the photon energy. A change of EPR signal is caused by either optical spin polarization [45,46] or the change of the charge state [47,48]. In the former change, the threshold of the optical pumping matches the zero-phonon line (ZPL) of the optical absorption band [45,46].…”
Section: Methodsmentioning
confidence: 99%
“…In the former change, the threshold of the optical pumping matches the zero-phonon line (ZPL) of the optical absorption band [45,46]. When the latter change is caused by a transition between the defect level and the valence band (or the conduction band), the photoexcitation threshold indicates the position of the defect level or the ionization energy of the defect [47,48].…”
Section: Methodsmentioning
confidence: 99%